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Boron diffusion into diamond under electric bias

Published online by Cambridge University Press:  31 January 2011

T. Sung ,
G. Popovici ,
M. A. Prelas ,
R. G. Wilson  and
S. K. Loyalka
T. Sung
Affiliation:
Nuclear Engineering Department, University of Missouri-Columbia, Columbia, Missouri 65211
G. Popovici
Affiliation:
Nuclear Engineering Department, University of Missouri-Columbia, Columbia, Missouri 65211
M. A. Prelas
Affiliation:
Nuclear Engineering Department, University of Missouri-Columbia, Columbia, Missouri 65211
R. G. Wilson
Affiliation:
Hughes Research Laboratories, Malibu, California 90265
S. K. Loyalka
Affiliation:
Particulate System Research Center, University of Missouri-Columbia, Columbia, Missouri 65211
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Abstract

Three natural type IIa diamond crystals were used for forced diffusion of boron. The diffusion was performed under bias otherwise with the same conditions. The boron diffusion coefficient in diamond was found to be 8.4 × 10−15 and 4 × 10−14 cm2/s at 1000 °C, depending on the direction of the electric field. The drift velocity of boron in diamond under 850 V at 1000 °C was found to be about 1.2 × 10−8 cm/s.

Type
Articles
Information
Journal of Materials Research , Volume 12 , Issue 5 , May 1997 , pp. 1169 - 1171
Copyright
Copyright © Materials Research Society 1997

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References

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