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Chemical vapor infiltration of SiC with microwave heating

Published online by Cambridge University Press:  31 January 2011

José I. Morell
Affiliation:
Department of Chemical Engineering, University of Houston, Houston, Texas 77204-4792
Demetre J. Economou
Affiliation:
Department of Chemical Engineering, University of Houston, Houston, Texas 77204-4792
Neal R. Amundson
Affiliation:
Department of Chemical Engineering, University of Houston, Houston, Texas 77204-4792
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Abstract

A mathematical model was developed to elucidate the interaction between transport/reaction processes and the evolution of porosity in chemical vapor infiltration with microwave heating (MCVI). The analysis included a set of partial differential equations describing the spatiotemporal variation of gaseous species concentration, composite temperature, porosity, and stress. Maxwell's equations were used to determine the distribution of power dissipated inside the composite. The deposition of silicon carbide was selected as a model chemical system to explore the general features of MCVI. MCVI can provide a favorable temperature distribution in the composite yielding an inside-out deposition pattern, thereby preventing entrapment of accessible porosity. For this temperature profile, tensile stresses develop at the outer regions and compressive stresses are found in the composite core. For a given system there exists a minimum value of the coefficient for heat transfer from the composite surface, h, below which accessible porosity is trapped within the composite. Similarly, there exists a maximum value of the incident microwave energy flux, I0, above which accessible porosity is trapped within the composite. I0 and h can be optimized for a given preform to achieve complete densification with minimum processing time. Using the technique of pulsed-power, the processing time can be reduced even further without compromising density uniformity. Power dissipation profiles in the composite depend strongly on preform thickness, microwave frequency, and relative loss factor.

Type
Articles
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1Cornie, J.A.Chiang, Y.M., Uhlmann, D. R.Mortensen, A. and Collins, J. M.Am. Ceram. Soc. Bull. 65, 293 (1986).Google Scholar
2Strife, J. R.Brennan, J.J. and Prewo, K. M.Ceram. Eng. Sci. Proc. 11, 871 (1990).Google Scholar
3Karnitz, M. A.Craig, D. F. and Richlen, S. L.Am. Ceram. Soc. Bull. 70, 430 (1991).Google Scholar
4Besmann, T. M.Lowden, R. A.Sheldon, B. W. and Stinton, D. P. in Chemical Vapor Deposition, edited by Spear, K. E. and Cullen, G. W. (The Electrochemical Society, Pennington, NJ, 1990), PV 90-12, p. 482.Google Scholar
5Sutton, W. H. , Am. Ceram. Soc. Bull. 68, 376 (1989).Google Scholar
6Ceramic Transactions 21, edited by Clark, D. E.Gac, F. D. and Sutton, W. H. (American Ceramic Society, Westerville, OH, 1991).Google Scholar
7Tai, N.H. and Chou, T.W., J. Am. Ceram. Soc. 73, 1489 (1990).CrossRefGoogle Scholar
8Gupte, S.M. and Tsamopoulos, J. A.J. Electrochem. Soc. 137, 3675 (1990).Google Scholar
9Middleman, S.J. Mater. Res. 4, 1515 (1989).CrossRefGoogle Scholar
10Sheldon, B.W.J. Mater. Res. 5, 2729 (1990).CrossRefGoogle Scholar
11Melkote, R. R. and Jensen, K. F. in Chemical Vapor Deposition of Refractory Metals and Ceramics, edited by Besmann, T. M. and Gallois, B. M. (Mater. Res. Soc. Symp. Proc. 168, Pittsburgh, PA, 1990), p. 67.Google Scholar
12Sotirchos, S.V.AIChE J. 37, 1365 (1991).CrossRefGoogle Scholar
13Gupta, D. and Evans, J.W.J. Mater. Res. 6, 810 (1991).CrossRefGoogle Scholar
14Morell, J. I.Economou, D. J. and Amundson, N. R.J. Elec-trochem. Soc. 139, 328 (1992).Google Scholar
15Morell, J. I.Economou, D. J. and Amundson, N. R.J. Mater. Res. 7, 2447 (1992).CrossRefGoogle Scholar
16Stratton, J. A.Electromagnetic Theory (McGraw-Hill, New York, 1941).Google Scholar
17Kriegsmann, G.A.J. Appl. Phys. 71, 1960 (1992).CrossRefGoogle Scholar
18Boley, B.A. and Weiner, J.H.Theory of Thermal Stresses, 4th printing (John Wiley, New York, 1967).Google Scholar
19Jackson, R.Transport in Porous Catalysts (Elsevier Publishing Company, New York, 1977).Google Scholar
20Bird, R. B.Stewart, W. E. and Lightfoot, E. N.Transport Phenomena (John Wiley & Sons, New York, 1960).Google Scholar
21Melkote, R.R. and Jensen, K.F.AIChE J. 35, 1942 (1989).CrossRefGoogle Scholar
22Tomadakis, M. M. and Sotirchos, S. V.AIChE J. 37, 74 (1991).Google Scholar
23Schlichting, J.Powder Metall. Int. 12, 141 (1980).Google Scholar
24Langlais, F.Naslain, R.Tarride, B. and Prebende, C.J. de Physique SO, 93 (1989).Google Scholar
25Brennfleck, K.Fitzer, E.Schoch, G. and Dietrich, M. in Proc. Int. Conf. on CVD, edited by Robison, M.Brekel, C.H.J. van den, Cullen, G. W.Blocher, J. M. Jr. , and Rai-Choudhury, P. (The Electrochemical Society, Pennington, NJ, 1984), Vol. 84-6, p. 649.Google Scholar
26Boor, C. de, A Practical Guide to Splines (Springer-Verlag, New York, 1978).CrossRefGoogle Scholar