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Crystal structure of new composition boron-rich boron nitride using Raman spectroscopy

Published online by Cambridge University Press:  18 February 2016

Hidetoshi Saitoh
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
Katsuhito Yoshida
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
Walter A. Yarbrougha
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
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Extract

The synthesis of poly crystalline boron nitride films, with β-rhombohedral boron crystallites, was accomplished with BCl3–NH3–H2 in a tungsten hot filament chemical vapor deposition apparatus. Raman spectra and XRD results revealed that the crystal structure of the boron nitride films is similar to rhombohedral boron carbide B4C. The composition of these crystallites by XPS was found to give a ratio of boron to nitrogen of 3 : 1 . These results suggest that the boron nitride crystals obtained in this work are previously unreported compounds of a rhombohedral boron-rich boron nitride, analogous to boron carbide, B4C.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

1. Saitoh, H. and Yarbrough, W. A., Diamond and Related Materials 1 (2-4), 137 (1992).Google Scholar
2. Saitoh, H. and Yarbrough, W.A., Appl. Phys. Lett. 58, 2228 (1991).Google Scholar
3. Saitoh, H. and Yarbrough, W.A., Appl. Phys. Lett. 58, 2484 (1991).Google Scholar
4. Komatsu, S., Moriyoshi, Y., Kasamatsu, M., and Yamada, K., J. Phys. D: Appl. Phys. 24, 1687 (1991).CrossRefGoogle Scholar
5. Motojima, S., Tamura, Y., and Sugiyama, K., Thin Solid Films 88, 269 (1982).Google Scholar
6. Hiraga, K., Oku, T., Hirabayashi, M., Matsuda, T., and Hirai, T., Mater, J.. Sci. Lett. 8, 130 (1988).Google Scholar
7. Ploog, K., Rauh, P., Stoeger, W., and Schmidt, H., J. Cryst. Growth 13/14, 350 (1972).Google Scholar
8. Ploog, K., Schmidt, H., Amberger, E., Will, G., and Kossobutzki, K. H., J. Less-Common Metals 29, 161 (1972).Google Scholar
9. Saitoh, H., Yoshida, K., and Yarbrough, W.A., J. Chem. Vapor Deposition (in press).Google Scholar
10. Levy, R.A., Resnick, D.J., Frye, R.C., Yanof, A.W., Wells, G.M., and Cerrina, F., J. Vac. Sci. Technol. B6, 154 (1987).Google Scholar
11. Wiggins, M.D., Aita, C.R., and Hickernell, F.S., J. Vac. Sci. Technol. A2, 322 (1984).CrossRefGoogle Scholar
12. Condon, J. R., Holcombe, C. E., Johnson, D. H., and Steckel, L. M., Inorg. Chem. 15, 2173 (1976).Google Scholar
13. Komatsu, S. and Moriyoshi, Y., J. Cryst. Growth 102, 899 (1990).Google Scholar
14. Joint Committee on Powder Diffraction Standards Data File, Card No. 11-618.Google Scholar
15. Tallant, D.R., Aselage, T.L., Campbell, A.N., and Emin, D., Phys. Rev. 40, 5649 (1989).Google Scholar
16. Tallant, D. R., Aselage, T. L., and Emin, D., in Boron-Rich Solids, University of New Mexico, Albuquerque, NM, Proc. Int. Conf. on the Physics and Chemistry of Boron and Boron-Rich Borides, AIP Conf. Proc. No. 231, edited by Emin, D., Aselage, T. L., Switenoick, A. C., Morosin, B., and Belkel, C. L. (AIP, New York, 1990), pp. 301311.Google Scholar
17. Allen, R.D., J. Am. Chem. Soc. 75, 3582 (1953).Google Scholar
18. Carlson, T. A., in Photoelectron and Auger Spectroscopy (Plenum Press, New York, 1975).Google Scholar
19. Rother, B., Weissmantel, C., and Leonhardt, G., Phys. Status Solidi 100, 533 (1987).Google Scholar
20. Aleshin, V.G., Sokolov, A.N., and Shulzhenko, A. A., Sverkhtverdye Materialy 7 (5), 12 (1985).Google Scholar