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Effects of germanium on the electronic transport mechanism in Co20(Cu1-xGex)80 nanogranular ribbons

Published online by Cambridge University Press:  31 January 2011

J. He
Affiliation:
Shenyang National Laboratory for Materials Science and International Center for Materials Physics, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, People's Republic of China, and Department of Physics and Astronomy and Center for Materials Research and Analysis, University of Nebraska, Lincoln, Nebraska 68588-0113
Z. D. Zhang
Affiliation:
Shenyang National Laboratory for Materials Science and International Center for Materials Physics, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, People's Republic of China
J. P. Liu
Affiliation:
Department of Physics and Astronomy and Center for Materials Research and Analysis, University of Nebraska, Lincoln, Nebraska, 68588–0113, and Institute for Micromanufacturing, Louisiana Tech University, Ruston, Louisiana 71272
D. J. Sellmyer
Affiliation:
Department of Physics and Astronomy and Center for Materials Research and Analysis, University of Nebraska, Lincoln, Nebraska 68588-0113
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Abstract

The dependency of giant magnetoresistance (GMR) on the nonmagnetic matrix in nanogranular Co20(Cu1-xGex)80 ribbons was studied. When the matrix Cu is substituted with semiconductor Ge, the magnetoresistance transitioned from negative to positive at low temperatures. The positive GMR effect is closely related to the quantity of Co/Co3Ge2/Co junctionlike configurations. This result provides evidence for the competition between two types of electronic transport mechanisms in the magnetic granular ribbons: (i) electronic spin-dependent scattering, inducing a negative magnetoresistance and (ii) Coulomb blockade of the electronic tunneling, inducing a positive magnetoresistance.

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Articles
Copyright
Copyright © Materials Research Society 2002

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