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Flexible solution-processed high-voltage organic thin film transistor

Published online by Cambridge University Press:  23 November 2017

Andy Shih ,
Elizabeth Schell  and
Akintunde Ibitayo Akinwande
Andy Shih*
Affiliation:
Department of Electrical Engineering and Computer Science, Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
Elizabeth Schell
Affiliation:
Department of Electrical Engineering and Computer Science, Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
Akintunde Ibitayo Akinwande
Affiliation:
Department of Electrical Engineering and Computer Science, Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
*
a)Address all correspondence to this author. e-mail: ashih@mit.edu
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Abstract

6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) and pentacene-based high-voltage organic thin film transistors (HVOTFTs) have been fabricated on solid and flexible substrates via a low-temperature (<100 °C) solution-processed and vacuum-deposited fabrication method. A high-k dielectric Bi1.5Zn1Nb1.5O7 and an organic dielectric parylene-C have been incorporated into the transistor design. The reliability of the HVOTFTs was analyzed under flexure, where a nonsaturating I–V characteristic behavior was observed. Here, the HVOTFT exhibited a mobility μ of 0.018 cm2/(V s) and a large breakdown voltage of |VDS| > 120 V and >550 V for TIPS-pentacene and pentacene devices, respectively. The large breakdown voltages are attributed to an organic semiconductor channel region which is partially gated, allowing for a large potential drop. Thiolphenol-based SAMs were used to help improve charge injection. Electrical measurements were also performed with samples designed with a top metal field plate to improve control of the charge carrier within the channel.

Keywords

thin filmorganicssolution deposition
Type
Invited Paper
Information
Journal of Materials Research , Volume 33 , Issue 2 , 29 January 2018 , pp. 149 - 160
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Copyright
Copyright © Materials Research Society 2017 

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Footnotes

Contributing Editor: Sam Zhang

References

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