Hostname: page-component-848d4c4894-nr4z6 Total loading time: 0 Render date: 2024-06-09T07:21:25.890Z Has data issue: false hasContentIssue false

Investigation of the novel charge transfer complex Cd-TCNQ

Published online by Cambridge University Press:  31 January 2011

A. Arena
Affiliation:
Dipartimento di Fisica della Materia e Technologie Fisiche Avanzate, Istituto Nazionale per la Fisica della Materia, Università di Messina, Salita Sperone 31, 98166 S. Agata, Messina, Italy
A. M. Mezzasalma
Affiliation:
Dipartimento di Fisica della Materia e Technologie Fisiche Avanzate, Istituto Nazionale per la Fisica della Materia, Università di Messina, Salita Sperone 31, 98166 S. Agata, Messina, Italy
S. Patanè
Affiliation:
Dipartimento di Fisica della Materia e Technologie Fisiche Avanzate, Istituto Nazionale per la Fisica della Materia, Università di Messina, Salita Sperone 31, 98166 S. Agata, Messina, Italy
G. Saitta
Affiliation:
Dipartimento di Fisica della Materia e Technologie Fisiche Avanzate, Istituto Nazionale per la Fisica della Materia, Università di Messina, Salita Sperone 31, 98166 S. Agata, Messina, Italy
Get access

Abstract

A novel metal salt of TCNQ (tetracyanoquinodimethane) has been synthesized via an electrochemical process using cadmium as donor. Thin films of the same material have been obtained by evaporating under high vacuum the metal and the organic molecule. The electronic properties of a pellet of the powdered material have been investigated by means of standard UV-VIS-IR spectroscopy, x-ray photoelectron spectroscopy, and Auger electron spectroscopy. The complex shows two absorption structures at about 3.4 eV and 1.7 eV due to the in-plane intramolecular transitions and a shoulder at about 1.4 eV probably due to the bond with the metal. The infrared spectrum is dominated by a deep absorption structure distinctive of the charge transfer. The electrical conductivity of the sample shows a semiconductor behavior in the investigated temperature range; the best fit of the transport data provides an activation energy of about 0.12 eV and shows that at low temperature the electrical conductivity is mainly due to a hopping process among differently charged sites.

Type
Articles
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Lindquist, J. M. and Hemminger, J. C., J. Phys. Chem. 92, 1394 (1988).CrossRefGoogle Scholar
2.Arena, A., Schiavo, S. Lo, Mezzasalma, A. M., Patanè, S., and Saitta, G., J. Mater. Res. 9, 2706 (1994).CrossRefGoogle Scholar
3.Terashita, S., Nakasatu, K., and Ozaki, Y., J. Phys. Chem. 99, 3618 (1995).CrossRefGoogle Scholar
4.Tamada, H. and Omichi, H., Thin Solid Films 247, 148 (1994).CrossRefGoogle Scholar
5.Chael, J. S., Bloch, A. N., Bryden, W. A., Maxfield, M., Poehler, T. O., and Cowan, D. O., J. Am. Chem. Soc. 103, 2442 (1981).Google Scholar
6.Brau, A., Farges, J. P., and Ghezzal, E. H., Solid State Ionics 44, 331 (1991).CrossRefGoogle Scholar
7.Girlando, A., Bozio, R., Pecile, C., and Torrance, J. B., Phys. Rev. B 26, 2306 (1982).CrossRefGoogle Scholar
8.Vlasova, R. M., Gutman, A. I., Rozenshtein, L. D., and Kartenko, N. F., Phys. Stat. Solidi (b) 47, 435 (1971).CrossRefGoogle Scholar
9.Kamitsos, E. I., Papavassiliou, G. C., and Karakassides, M. A., Mol. Cryst. Liq. Cryst. 134, 43 (1986).CrossRefGoogle Scholar
10.Torrance, J. B., Scott, B. A., and Kaufman, F. B., Solid State Commun. 88 971 (1993).CrossRefGoogle Scholar
11.Wells, S. K., Giergiel, J., Land, T. A., Lindquist, J. M., and Hemminguer, J. C., Surf. Sci. 257, 129 (1991).CrossRefGoogle Scholar
12.Kaplunov, M. G., Shulga, Y. M., Pokhodnya, K. I., and Borodko, Y. G., Phys. Status Solidi (b) 73, 315 (1976).CrossRefGoogle Scholar
13.Mott, V. N. and Davis, E. A., Electronic Processes in Non-Crystalline Materials, 2nd ed. (Clarendon Press, Oxford, 1979).Google Scholar
14.Conwell, E. M., Phys. Rev. B 8, 1818 (1978).CrossRefGoogle Scholar
15.Chaikin, P. M., Phys. Rev. B 13, 647 (1976).CrossRefGoogle Scholar
16.Kwak, J. F., Beni, G., and Chaikin, P. M., Phys. Rev. B 13, 641 (1976).CrossRefGoogle Scholar
17.Kwak, J. F., and Beni, G., Phys. Rev. B 13, 652 (1976).CrossRefGoogle Scholar