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Microstructural characteristics of conductive SrRuO3 thin films formed by pulsed-laser deposition

Published online by Cambridge University Press:  31 January 2011

P. Lu ,
F. Chu ,
Q. X. Jia  and
T. E. Mitchell
P. Lu
Affiliation:
Department of Materials Science and Engineering, New Mexico Institute of Mining and Technology, Socorro, New Mexico 87801
F. Chu
Affiliation:
Materials Science and Technology Division, MS K765, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
Q. X. Jia
Affiliation:
Materials Science and Technology Division, MS K765, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
T. E. Mitchell
Affiliation:
Materials Science and Technology Division, MS K765, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
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Abstract

Transmission electron microscopy and high-resolution electron microscopy have been used to study microstructural properties of conductive SrRuO3 films grown by pulsed laser deposition on (001) LaAlO3 and (001) SrTiO3 substrates. It was found that the SrRuO3 films deposited on both substrates consist of mixed domains of [001] and [110] orientations, with orientation relationships that can be described as (i) (001)f ‖ (001)s and [110]f ‖ [100]s and (ii) (110)f ‖ (001)s and [001]f ‖ [100]s, respectively. The SrRuO3 films deposited on SrTiO3, in particular, were found to have a layered domain structure, with the [110] domain grown initially on the substate, followed by growth of the [001] oriented domain with increasing thickness. The films on SrTiO3 are strained and have a coherent interface with the substrate. The SrRuO3 films deposited on LaAlO3, on the other hand, contain a high density of structural defects such as stacking faults and microtwins on the (022) planes. Microtwins as large as 50 nm in thickness are observed in the films deposited on LaAlO3. Possible causes for the observed structural defects in the films are discussed.

Type
Articles
Information
Journal of Materials Research , Volume 13 , Issue 8 , August 1998 , pp. 2302 - 2307
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1.Cheung, J. T., Morgan, P. E. D., Lowndes, D. H., Zheng, X. Y., and Breen, J., Appl. Phys. Lett. 62, 2045 (1993).CrossRefGoogle Scholar
2.Satyalakshmi, K. M., Mallya, R. M., Ramanathan, K. V., Wu, X. D., Brainard, B., Gautier, D. C., Vasanthacharya, N. Y., and Gedge, M. S., Appl. Phys. Lett. 62, 1233 (1993).CrossRefGoogle Scholar
3.Char, K., Colcough, M. S., Geballe, T. H., and Myers, K. E., Appl. Phys. Lett. 62, 196 (1993).CrossRefGoogle Scholar
4.Gupta, A., Hussey, B. W., Guloy, A. M., Shaw, T. M., Saraf, R. F., Bringley, J. F., and Scott, B. A., J. Solid State Chem. 108, 202 (1994).CrossRefGoogle Scholar
5.Eom, C. B., Cava, R. J., Phillips, J. M., and Werder, D. J., Appl. Phys. Lett. 77, 5449 (1995).Google Scholar
6.Jia, Q. X., Song, S. G., Foltyn, S. R., and Wu, X. D., J. Mater. Res. 10, 2401 (1995).CrossRefGoogle Scholar
7.Eom, C. B., Cava, R. J., Fleming, R. M., Phillips, J. M., van Dover, R. B., Marshall, J. H., Hsu, J. W. P., Krajewski, J. J., and Peck, W. F., Jr., Science 258, 1766 (1993).CrossRefGoogle Scholar
8.Wu, X. D., Foltyn, S.R., Dye, R. C., Coulter, Y., and Muenchausen, R. E., Appl. Phys. Lett. 62, 2434 (1993).CrossRefGoogle Scholar
9.Tiwari, P., Wu, X. D., Foltyn, S.R., Le, M. Q., Campbell, I. H., Dye, R. C., and Muenchausen, R. E., Appl. Phys. Lett. 64, 534 (1994).Google Scholar
10.Char, K., Antognazza, L., Geballe, T. H., Appl. Phys. Lett. 63, 2420 (1993).CrossRefGoogle Scholar
11.Char, K., Mater. Res. Bull. 19, 51 (1994).CrossRefGoogle Scholar
12.Lintenberg, F., Catana, A., Mannhart, J., and Schlom, D. G., Appl. Phys. Lett. 60, 1138 (1992).CrossRefGoogle Scholar
13.Ramesh, R., Inam, A., Wilkens, B., Chan, W. K., Hart, D. L., Luther, K., and Tarascon, J. M., Science 252, 944 (1991).CrossRefGoogle Scholar
14.Ramesh, R., Chan, W. K., Wilkens, B., Sands, T., Tarascon, J. M., Keramidas, V. G., and Evens, J. T., Jr., Integrated Ferroelectrics 1, 1 (1992).CrossRefGoogle Scholar
15.Eom, C. B., van Dover, R. B., Phillips, J. M., Werder, D. J., Marshall, J. H., Chen, C. H., Cava, R. J., Fleming, R. M., and Fork, D. K., Appl. Phys. Lett. 63, 2570 (1993).CrossRefGoogle Scholar
16.Jia, Q. X., Wu, X. D., Foltyn, S. R., and Tiwari, P., Appl. Phys. Lett. 66, 2197 (1995).CrossRefGoogle Scholar
17.Jia, Q. X., Chu, F., Adams, C. D., Wu, X. D., Hawley, M., Cho, J. H., Findikoglu, A. T., Foltyn, S. R., Smith, J. L., and Mitchell, T. E., J. Mater. Res. 11, 2263 (1996).CrossRefGoogle Scholar
18.Chu, F., Jia, Q. X., Landrum, G., Wu, X. D., Hawley, M., and Mitchell, T. E., J. Electron. Mater. 25, 1754 (1996).CrossRefGoogle Scholar
19.Antognazza, L., Char, K., Geballe, T. H., King, L. L. H., and Sleight, A. W., Appl. Phys. Lett. 63, 1005 (1993).CrossRefGoogle Scholar
20.Domel, R., Jia, C. L., Competti, C., Ockenfuss, G., and Branginski, A. I., Supercond. Sci. Technol. 7, 277 (1994).CrossRefGoogle Scholar
21.Chu, F.et al., unpublished.Google Scholar
22.Marshall, A. F., Char, K., Barton, R. W., Kapitulnik, A., and Laderman, S. S., J. Mater. Res. 5, 2049 (1990).CrossRefGoogle Scholar
23.Lu, P., Zhao, J., Chern, C. S., Li, Y. Q., Kulesha, G. A., Gallois, B., Norris, P., Kear, B., and Cosandey, F., J. Mater. Res. 7, 1993 (1992).CrossRefGoogle Scholar
24.Ameen, M. S., Graettinger, T. M., Rou, S. H., Al-Shareef, H. N., Gifford, K. D., Auciello, O., and Kingon, A. I. in Ferroelectric Thin Films, edited by Myers, E. R. and Kingon, A. I. (Mater. Res. Soc. Symp. Proc. 200, Pittsburgh, PA, 1990), p. 65.Google Scholar
25.Ogawa, S., Watanabe, D., Watanabe, H., and Komoda, T., Acta Crystallogr. 11 (1958).CrossRefGoogle Scholar
26.Read, W. T. J., in Dislocations in Crystal (1953).Google Scholar
27.Matthews, J. M., Philos. Mag. 7, 915 (1961).CrossRefGoogle Scholar
28.Pashley, D. W., Stowell, M. J., Jacobs, M. H., and Law, T. J., Philos. Mag. 10, 127 (1964).CrossRefGoogle Scholar