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Multicrystalline silicon material: Effects of classical and rapid thermal processes

Published online by Cambridge University Press:  31 January 2011

J. C. Muller  and
S. Martinuzzi
J. C. Muller
Affiliation:
CNRS, Laboratoire de Physique et Applications des Semiconductors (UPR292), BP 20, 67037 Strasbourg Cedex 2, France
S. Martinuzzi
Affiliation:
Laboratoire de Photoélectricité des Semiconducteurs (LPSC), Université Aix-Marseille, 13397 Marseille Cedex 13, France
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Abstract

For photovoltaic applications silicon is still the predominant material. Besides monocrystalline Czochralski wafers (Cz-Si), multicrystalline sheets (mc-Si) play an important role in terrestrial power applications (almost 50%). Large mc-Si ingots (up to 250 kg) are now produced in large scale by the industry using various directional solidification methods in appropriate crucibles (or molds). However, if the crystallographic properties are now quite satisfactory (columnar structure with large grains of more than 1 cm2, dislocations and intragrains defects), multicrystalline silicon contains larger quantities of impurities than single crystalline silicon which can have detrimental effects on the bulk minority carrier diffusion length (Ln,p). These impurities, including metals as well as high concentrations of carbon and/or oxygen, can degrade the photovoltaic properties of solar cells. Thermal treatments such as gettering, performed in a classical or rapid thermal furnace, studied separately or in conjunction with the doping steps can limit or avoid the degradation of the bulk diffusion length, but its efficiency is strongly dependent on the presence of these impurities in Si.

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Articles
Information
Journal of Materials Research , Volume 13 , Issue 10 , October 1998 , pp. 2721 - 2731
Copyright
Copyright © Materials Research Society 1998

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