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Photoluminescence and acceptor level state of p-type nitrogen-doped MgZnO films

Published online by Cambridge University Press:  31 January 2011

Z.P. Wei ,
B. Yao ,
X.H. Wang ,
Z.Z. Zhang ,
Y.M. Lu ,
D.Z. Shen ,
B.H. Li ,
J.Y. Zhang ,
D.X. Zhao  and
X.W. Fan
...Show all authors
Z.P. Wei
Affiliation:
Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China; Graduate School of Chinese Academy of Sciences, Beijing 100039, China; and Department of Physics, Changchun University of Science and Technology, Changchun 130022, China
B. Yao*
Affiliation:
Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
X.H. Wang
Affiliation:
Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
Z.Z. Zhang
Affiliation:
Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
Y.M. Lu
Affiliation:
Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
D.Z. Shen
Affiliation:
Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
B.H. Li
Affiliation:
Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
J.Y. Zhang
Affiliation:
Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
D.X. Zhao
Affiliation:
Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
X.W. Fan
Affiliation:
Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
Z.K. Tang
Affiliation:
Department of Physics, Hong Kong University of Science & Technology, Clear Water Bay, Kowloon, Hong Kong, China
*
a)Address all correspondence to this author. e-mail: yaobin196226@yahoo.com.cn
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Abstract

A wurtzite nitrogen-doped MgZnO (MgZnO:N) film was grown by plasma-assisted molecular-beam epitaxy (PAMBE) on c-plane sapphire using radical NO as oxygen source and nitrogen dopant. The as-grown film shows n-type conduction at room temperature, but transforms into p-type conduction after annealed. Photoluminescence (PL) spectrum measured at 80 K is dominated by neutral donor-bound exciton emission (D0X) located at 3.522 eV for the n-type MgZnO:N film, but by neutral acceptor-bound exciton emission (A0X) located at 3.515 eV for the p-type MgZnO:N film. By fitting exciton emission intensity of temperature-dependent PL spectra, the binding energies of the D0X and A0X were estimated to be 32 and 43 meV, respectively. Based on the energy shift of exciton emission, the band gap of the MgZnO:N film is estimated to be 3.613 eV, which is 179 meV larger than that of ZnO. Using the Haynes rule, the acceptor energy level of the MgZnO:N film was evaluated to be about 176 meV above the valence band.

Keywords

AlloyLuminescenceMolecular beam epitaxy (MBE)
Type
Articles
Information
Journal of Materials Research , Volume 22 , Issue 10 , October 2007 , pp. 2791 - 2795
Copyright
Copyright © Materials Research Society 2007

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