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Polycrystalline hexagonal boron nitride films on SiO2 for III–V semiconductor applications

Published online by Cambridge University Press:  31 January 2011

J. L. Hurd ,
D. L. Perry ,
B. T. Lee ,
K. M. Yu ,
E. D. Bourret  and
E. E. Haller
J. L. Hurd
Affiliation:
Center for Advanced Materials, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720
D. L. Perry
Affiliation:
Center for Advanced Materials, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720
B. T. Lee
Affiliation:
Center for Advanced Materials, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720
K. M. Yu
Affiliation:
Center for Advanced Materials, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720
E. D. Bourret
Affiliation:
Center for Advanced Materials, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720
E. E. Haller
Affiliation:
Center for Advanced Materials, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720
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Abstract

Isotropic hexagonal BN (h-BN) films were deposited on SiO2 crucibles used for synthesis of GaAs. Deposited films were analyzed for composition, morphology, and growth rates using proton resonant scattering, optical absorption, x-ray and electron diffraction, and transmission electron microscopy. The silicon concentration of GaAs synthesized in BN coated crucibles was approximately one order of magnitude higher than that for GaAs synthesized in uncoated crucibles under identical synthesis conditions.

Type
Articles
Information
Journal of Materials Research , Volume 4 , Issue 2 , April 1989 , pp. 350 - 354
Copyright
Copyright © Materials Research Society 1989

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References

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