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Preparation of CuIn(SxSe1–x)2 thin films with tunable band gap by controlling sulfurization temperature of CuInSe2

Published online by Cambridge University Press:  31 January 2011

Guangjun Wang
Affiliation:
Key Laboratory for Special Functional Materials of Ministry of Education, Henan University, Kaifeng 475004, People's Republic of China
Gang Cheng
Affiliation:
Key Laboratory for Special Functional Materials of Ministry of Education, Henan University, Kaifeng 475004, People's Republic of China
Binbin Hu
Affiliation:
Key Laboratory for Special Functional Materials of Ministry of Education, Henan University, Kaifeng 475004, People's Republic of China
Xiaoli Wang
Affiliation:
Key Laboratory for Special Functional Materials of Ministry of Education, Henan University, Kaifeng 475004, People's Republic of China
Shaoming Wan
Affiliation:
Key Laboratory for Special Functional Materials of Ministry of Education, Henan University, Kaifeng 475004, People's Republic of China
Sixin Wu
Affiliation:
Key Laboratory for Special Functional Materials of Ministry of Education, Henan University, Kaifeng 475004, People's Republic of China
Zuliang Du*
Affiliation:
Key Laboratory for Special Functional Materials of Ministry of Education, Henan University, Kaifeng 475004, People's Republic of China
*
a)Address all correspondence to this author. e-mail: zld@henu.edu.cn
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Abstract

In this paper, polycrystalline CuIn(SxSe1–x)2 thin films with tunable x and Eg (band gap) values were prepared by controlling the sulfurization temperature (T) of CuInSe2 thin films. X-ray diffraction indicated the CuIn(SxSe1–x)2 films exhibited a homogeneous chalcopyrite structure. When T increases from 150 to 500 °C, x increases from 0 to 1, and Eg increases from 0.96 to 1.43 eV. The relations between x and Eg and the sulfurization process of CuIn(SxSe1–x)2 thin films have been discussed. This work provides an easy and low-cost technique for preparing large area absorber layers of solar cell with tunable Eg.

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Articles
Copyright
Copyright © Materials Research Society 2010

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