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Solution-processed oxide thin film transistors on shape memory polymer enabled by photochemical self-patterning

Published online by Cambridge University Press:  14 September 2018

Trey B. Daunis ,
Diego Barrera ,
Gerardo Gutierrez-Heredia ,
Ovidio Rodriguez-Lopez ,
Jian Wang ,
Walter E. Voit  and
Julia W.P. Hsu
Trey B. Daunis*
Affiliation:
Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, USA
Diego Barrera
Affiliation:
Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, USA
Gerardo Gutierrez-Heredia
Affiliation:
Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, USA; and Centro de Investigaciones en Optica, León 37150, Guanajuato, México
Ovidio Rodriguez-Lopez
Affiliation:
Department of Electrical and Computer Engineering, Department of Bioengineering, The University of Texas at Dallas, Richardson, Texas 75080, USA
Jian Wang
Affiliation:
Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, USA
Walter E. Voit
Affiliation:
Department of Materials Science and Engineering, Department of Electrical and Computer Engineering, Department of Bioengineering, The University of Texas at Dallas, Richardson, Texas 75080, USA
Julia W.P. Hsu
Affiliation:
Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, USA
*
a)Address all correspondence to this author. e-mail: tbd041000@utdallas.edu
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Abstract

Solution-processed metal oxide electronics on flexible substrates can enable applications from military to health care. Due to limited thermal budgets and mismatched coefficients of thermal expansion between oxides and substrates, achieving good performance in solution-processed oxide films remains a challenge. Additionally, the use of traditional photolithographic processes is incompatible with low-cost, high-throughput roll-to-roll processing. Here, we demonstrate solution-deposited oxide thin film transistors (TFTs) on a shape memory polymer substrate, which offers unique control of final device shape and modulus. The key enabling step is the exposure of the precursor film to UV-ozone through a shadow mask to perform patterning and photochemical conversion simultaneously. These TFTs exhibit mobility up to 160 cm2/(V s), subthreshold swing as low as 110 mV/dec, and threshold voltage between −2 and 0 V, while maintaining compatibility with a flexible form factor at processing temperatures below 250 °C.

Keywords

devicesoxidepolymer
Type
Invited Paper
Information
Journal of Materials Research , Volume 33 , Issue 17 , 14 September 2018 , pp. 2454 - 2462
Copyright
Copyright © Materials Research Society 2018 

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References

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