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Synthesis and characterization of LiTaO3 thin films deposited on Si by the sol-gel method

Published online by Cambridge University Press:  03 March 2011

P.J. Retuert ,
P.G. Kneuer ,
O. Wittke ,
R.E. Avila  and
G.J. Piderit
P.J. Retuert
Affiliation:
FCFM, Universidad de Chile, Cas. 2777, Santiago, Chile
P.G. Kneuer
Affiliation:
FCFM, Universidad de Chile, Cas. 2777, Santiago, Chile
O. Wittke
Affiliation:
FCFM, Universidad de Chile, Cas. 2777, Santiago, Chile
R.E. Avila
Affiliation:
Comisión Chilena de Energía Nuclear, Cas. 188-D, Santiago, Chile
G.J. Piderit
Affiliation:
Comisión Chilena de Energía Nuclear, Cas. 188-D, Santiago, Chile
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Abstract

Polycrystalline LiTaO3 (LT) thin films have been prepared on (001)Si substrates by the sol-gel method. A Li-Ta double alkoxide prepared from lithium methoxide and tantalum ethoxide precursors was spin coated on Si and heated up to 950 °C. The dependence of the film quality upon the process variables, alkoxide concentration before hydrolysis, the water to double alkoxide ratio, and the final double alkoxide concentration, has been established. Preferential alignment of the (104) LT planes was observed parallel to the (100)Si surface. Most films present resistivities of the order of 30 kΩ · cm and breakdown field in excess of 200 kV/cm.

Type
Articles
Information
Journal of Materials Research , Volume 10 , Issue 11 , November 1995 , pp. 2797 - 2800
Copyright
Copyright © Materials Research Society 1995

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References

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