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Thin SiO2 coating on ZnS phosphors for improved low-voltage cathodoluminescence properties

Published online by Cambridge University Press:  31 January 2011

W. Park ,
B. K. Wagner ,
G. Russell ,
K. Yasuda ,
C. J. Summers ,
Y. R. Do  and
H. G. Yang
W. Park*
Affiliation:
Phosphor Technology Center of Excellence, Manufacturing Research Center, Georgia Institute of Technology, Atlanta, Georgia 30332-0560
B. K. Wagner
Affiliation:
Phosphor Technology Center of Excellence, Manufacturing Research Center, Georgia Institute of Technology, Atlanta, Georgia 30332-0560
G. Russell
Affiliation:
Phosphor Technology Center of Excellence, Manufacturing Research Center, Georgia Institute of Technology, Atlanta, Georgia 30332-0560
K. Yasuda
Affiliation:
Phosphor Technology Center of Excellence, Manufacturing Research Center, Georgia Institute of Technology, Atlanta, Georgia 30332-0560
C. J. Summers
Affiliation:
Phosphor Technology Center of Excellence, Manufacturing Research Center, Georgia Institute of Technology, Atlanta, Georgia 30332-0560
Y. R. Do
Affiliation:
Materials Technology Laboratory, Samsung SDI Co., Ltd., 575 Shin-Dong, Paldal-Gu, Suwon City, Kyungki-Do, Korea 442-390
H. G. Yang
Affiliation:
Materials Technology Laboratory, Samsung SDI Co., Ltd., 575 Shin-Dong, Paldal-Gu, Suwon City, Kyungki-Do, Korea 442-390
*
a)Address all correspondence to this author. e-mail: won.park@gtri.gatech.edu
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Abstract

A significant improvement (40–60%) was reported in the low voltage (100–1000V) cathodoluminescence efficiency of ZnS phosphors coated with SiO2 by the sol-gel technique. The properties of the coatings were found to be critically dependent upon the precursor concentration, pH value and the temperature of the solution with optimum performance being obtained for a SiO2 concentration of 1.0 wt%, pH values between 7–9, and a solution temperature of 83 °C. The efficiency curves exhibited a characteristic voltage dependence which was analyzed by a one-dimensional numerical model. Enhanced low voltage efficiency was attributed to a reduction of surface recombination and the actual shape of the efficiency curve was determined by the interplay between the reduction of surface recombination and energy losses in the SiO2 coating.

Type
Articles
Information
Journal of Materials Research , Volume 15 , Issue 11 , November 2000 , pp. 2288 - 2291
Copyright
Copyright © Materials Research Society 2000

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References

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