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Thin-film reactions of Al with Co, Cr, Mo, Ta, Ti, and W

Published online by Cambridge University Press:  31 January 2011

E. G. Colgan  and
J. W. Mayer
E. G. Colgan
Affiliation:
IBM, East Fishkill, General Technology Division, Hopewell Junction, New York 12533
J. W. Mayer
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853
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Abstract

The thin-film interactions of Al with refractory metals (Co, Cr, Mo, Ta, Ti, and W) have been investigated. The composition and thickness of the reacted aluminide layers were determined by Rutherford backscattering and phase identification was made by x-ray diffraction. Scanning electron microscopy was used to examine the lateral uniformity. The initial aluminide phases to grow are the Al-rich phases: Co2Al9, Cr2Al13, MoAl12, TaAl3, TiAl3, and WAI12. These are the most Al-rich phases on the phase diagrams. The reaction temperatures varied between 350 and 525 °C.

Type
Articles
Information
Journal of Materials Research , Volume 4 , Issue 4 , August 1989 , pp. 815 - 820
Copyright
Copyright © Materials Research Society 1989

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References

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