Hostname: page-component-848d4c4894-ttngx Total loading time: 0 Render date: 2024-06-10T11:25:31.790Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of Si Surface by SEM-SXES using Low Incident Voltage

Published online by Cambridge University Press:  01 August 2018

Yasuaki Yamamoto ,
Hideyuki Takahashi ,
Takanori Murano ,
Naoki Kikuchi  and
Natasha Erdman
Yasuaki Yamamoto
Affiliation:
JEOL Ltd., Akishima, Tokyo, Japan
Hideyuki Takahashi
Affiliation:
JEOL Ltd., Akishima, Tokyo, Japan
Takanori Murano
Affiliation:
JEOL Ltd., Akishima, Tokyo, Japan
Naoki Kikuchi
Affiliation:
JEOL Ltd., Akishima, Tokyo, Japan
Natasha Erdman
Affiliation:
JEOL USA Inc., Peabody, MA, USA

Abstract

An abstract is not available for this content so a preview has been provided. As you have access to this content, a full PDF is available via the ‘Save PDF’ action button.
Image of the first page of this content. For PDF version, please use the ‘Save PDF’ preceeding this image.'
Type
Abstract
Information
Microscopy and Microanalysis , Volume 24 , Supplement S1: Proceedings of Microscopy & Microanalysis 2018 , August 2018 , pp. 1062 - 1063
Copyright
© Microscopy Society of America 2018 

References

[1] Terauchi, M., et al, Journal of Electron Microscopy 61 2012) p. 1.Google Scholar
[2] Takahashi, H., et al, Microscopy and Microanalysis 22(S3 2016) p. 422.Google Scholar