Hostname: page-component-848d4c4894-2pzkn Total loading time: 0 Render date: 2024-06-12T18:34:39.886Z Has data issue: false hasContentIssue false
  • English
  • Français

In Situ Biasing TEM Characterization of Resistive Switching Phenomena in TiO2-based RRAM

Published online by Cambridge University Press:  27 August 2014

Jonghan Kwon ,
Abhishek A. Sharma ,
James A. Bain ,
Yoosuf N. Picard  and
Marek Skowronski
Jonghan Kwon
Affiliation:
Dept. of Materials Sci. and Eng., Carnegie Mellon University, Pittsburgh, PA 15213, USA
Abhishek A. Sharma
Affiliation:
Dept. of Electrical and Computer Eng., Carnegie Mellon University, Pittsburgh, PA 15213, USA
James A. Bain
Affiliation:
Dept. of Electrical and Computer Eng., Carnegie Mellon University, Pittsburgh, PA 15213, USA
Yoosuf N. Picard
Affiliation:
Dept. of Materials Sci. and Eng., Carnegie Mellon University, Pittsburgh, PA 15213, USA
Marek Skowronski
Affiliation:
Dept. of Materials Sci. and Eng., Carnegie Mellon University, Pittsburgh, PA 15213, USA

Abstract

An abstract is not available for this content so a preview has been provided. As you have access to this content, a full PDF is available via the ‘Save PDF’ action button.
Image of the first page of this content. For PDF version, please use the ‘Save PDF’ preceeding this image.'
Type
Abstract
Information
Microscopy and Microanalysis , Volume 20 , Supplement S3: Proceedings of Microscopy & Microanalysis 2014 , August 2014 , pp. 1548 - 1549
Copyright
Copyright © Microscopy Society of America 2014 

References

[1] Jeong, D., et al., J. Appl. Phys., 104, 123716 (2008).Google Scholar
[2] Kim, K.M., et al., Nanotechnology, 22, 254002 (2011).Google Scholar
[3] Szot, K., et al., Nanotechnology, 22, 254001 (2011).Google Scholar