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Polarity Determination in GaN Nanowires by Electron Backscatter Diffraction

Published online by Cambridge University Press:  05 August 2019

G. Naresh-Kumar ,
C. Trager-Cowan  and
A. Winkelmann
G. Naresh-Kumar*
Affiliation:
Department of Physics, SUPA, University of Strathclyde, Glasgow, G4 0NG, UK
C. Trager-Cowan
Affiliation:
Department of Physics, SUPA, University of Strathclyde, Glasgow, G4 0NG, UK
A. Winkelmann
Affiliation:
Laser Zentrum Hannover e.V., Hollerithallee 8, 30419 Hannover, Germany
*
*Corresponding author: naresh.gunasekar@strath.ac.uk

Abstract

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Type
Applications of Integrated Electron Probe Microscopy and Microanalysis Techniques in Characterizing Natural and Synthetic Materials
Information
Microscopy and Microanalysis , Volume 25 , Supplement S2 , August 2019 , pp. 2404 - 2405
Copyright
Copyright © Microscopy Society of America 2019 

References

[1]Winkelmann, A. and Nolze, G. Applied Physics Letters. 106, (2015) p. 072101-1.Google Scholar
[2]Winkelmann, A., Nolze, G., Himmerlich, M., Lebedev, V. and Reichmann, A. Proceedings of the 6th International Conference on Recrystallization and Grain Growth, USA, (2016) p. 281.Google Scholar
[3]Naresh-Kumar, G., Vilalta-Clemente, A., Jussila, H., Winkelmann, A., Nolze, G., Vespucci, S., Nagarajan, S., Wilkinson, A. J., Trager-Cowan, C., Scientific Reports. 7, (2017). p. 10916Google Scholar
[4]The authors acknowledge Prof. Tao Wang's group at the University of Sheffield for providing the GaN nanowire sample and support from the EPSRC grant; manufacturing of nano – engineered III-nitride semiconductors (EP/M015181/1).Google Scholar