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Control of p- and n-type Conduction in Thermoelectric Non-doped Mg2Si Thin Films Prepared by Sputtering Method

Published online by Cambridge University Press:  05 February 2018

Mao Kurokawa ,
Takao Shimizu ,
Mutsuo Uehara ,
Atsuo Katagiri ,
Kensuke Akiyama ,
Masaaki Matsushima ,
Hiroshi Uchida ,
Yoshisato Kimura  and
Hiroshi Funakubo
Mao Kurokawa
Affiliation:
Department of Innovation and Engineered Materials, Tokyo Institute of Technology, Yokohama226-8502, Japan
Takao Shimizu
Affiliation:
School of Materials and Chemical Technology, Tokyo Institute of Technology, Yokohama226-8502, Japan
Mutsuo Uehara
Affiliation:
Department of Innovation and Engineered Materials, Tokyo Institute of Technology, Yokohama226-8502, Japan
Atsuo Katagiri
Affiliation:
Department of Innovation and Engineered Materials, Tokyo Institute of Technology, Yokohama226-8502, Japan
Kensuke Akiyama
Affiliation:
School of Materials and Chemical Technology, Tokyo Institute of Technology, Yokohama226-8502, Japan Kanagawa Institute of Industrial Science and Technology, Ebina, Kanagawa243-0435, Japan
Masaaki Matsushima
Affiliation:
Department of Innovation and Engineered Materials, Tokyo Institute of Technology, Yokohama226-8502, Japan
Hiroshi Uchida
Affiliation:
Department of Materials and Life Sciences, Sophia University, Chiyoda, Tokyo102-8554, Japan
Yoshisato Kimura
Affiliation:
School of Materials and Chemical Technology, Tokyo Institute of Technology, Yokohama226-8502, Japan
Hiroshi Funakubo*
Affiliation:
Department of Innovation and Engineered Materials, Tokyo Institute of Technology, Yokohama226-8502, Japan School of Materials and Chemical Technology, Tokyo Institute of Technology, Yokohama226-8502, Japan
*
*(Email: funakubo.h.aa@m.titech.ac.jp)
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Abstract

A method for controlling the conduction-type in Mg2Si films without doping is investigated. Mg2Si films exhibit p-type conduction after a post-heat treatment up to 500 °C in atmospheric He. However, covering the films with Mg ribbon during a subsequent heat treatment at 500 °C converts the conduction to n-type, demonstrating that the heat treatment atmosphere can control the conduction type. Based on the reported first principles calculations suggesting that interstitial Mg and Mg vacancies in Mg2Si are the origins of n-type and p-type conduction, respectively, the post-heat treatment in He induces Mg vacancies due to the evaporation of Mg from the film, resulting in p-type conduction. The subsequent heat treatment when the film is covered with Mg ribbon fills the Mg vacancies and the additional interstitial Mg is incorporated, resulting in n-type conduction. These observations differ from the reported data for heat treatment of stable n-type conduction in non-doped Mg2Si-sintered bodies and may realize a novel control method for the conduction type in Mg2Si films.

Keywords

thermoelectricsputteringthin film
Type
Articles
Information
MRS Advances , Volume 3 , Issue 24: Energy and Sustainability , 2018 , pp. 1355 - 1359
Copyright
Copyright © Materials Research Society 2018 

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