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Measuring Surface Energies of GaAs (100) and Si (100) by Three Liquid Contact Angle Analysis (3LCAA) for Heterogeneous Nano-BondingTM

Published online by Cambridge University Press:  10 July 2018

Christian E. Cornejo ,
Michelle E. Bertram ,
Timoteo C. Diaz ,
Saaketh R. Narayan ,
Sukesh Ram ,
Karen L. Kavanagh ,
Nicole Herbots ,
Jack M. Day ,
Franscesca J. Ark  and
Ajit Dhamdhere
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Christian E. Cornejo*
Affiliation:
Cactus Materials Inc., Tempe, AZ Arizona State University School for Engineering of Matter, Transport, and Energy, Tempe, AZ
Michelle E. Bertram
Affiliation:
Cactus Materials Inc., Tempe, AZ Arizona State University School for Engineering of Matter, Transport, and Energy, Tempe, AZ
Timoteo C. Diaz
Affiliation:
Cactus Materials Inc., Tempe, AZ Arizona State University School for Engineering of Matter, Transport, and Energy, Tempe, AZ
Saaketh R. Narayan
Affiliation:
Arizona State University Department of Physics, Tempe, AZ
Sukesh Ram
Affiliation:
Arizona State University Department of Physics, Tempe, AZ
Karen L. Kavanagh
Affiliation:
Simon Fraser University, Department of Physics, Burnaby, BC, V5A 1S6 Canada
Nicole Herbots
Affiliation:
Cactus Materials Inc., Tempe, AZ Arizona State University Department of Physics, Tempe, AZ
Jack M. Day
Affiliation:
Arizona State University Department of Physics, Tempe, AZ
Franscesca J. Ark
Affiliation:
Arizona State University Department of Physics, Tempe, AZ
Ajit Dhamdhere
Affiliation:
Cactus Materials Inc., Tempe, AZ
Robert J. Culbertson
Affiliation:
Arizona State University Department of Physics, Tempe, AZ
Rafiqul Islam
Affiliation:
Cactus Materials Inc., Tempe, AZ Arizona State University Department of Physics, Tempe, AZ
*
*(Email: cornejoc22@yahoo.com)
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Abstract

Analysis of the total surface energy γT and its three components as established by the van Oss-Chaudhury-Good Theory (vOCG) is conducted via Three Liquid Contact Angle Analysis (3LCAA). γT is correlated with the composition of the top monolayers (ML) obtained from High-Resolution Ion Beam Analysis (HR-IBA). Control of γT enables surface engineering for wafer bonding (Nano-BondingTM) and/or epitaxial growth. Native oxides on boron-doped p-Si(100) are found to average γT of 53 ± 1.4 mJ/m2) and are always hydrophilic. An HF in methanol or aqueous HF etch for 60 s always renders Si(100) hydrophobic. Its γT decreases by 20% to 44 ± 3 mJ/m2 in HF in methanol etch and by 10% to 48 ± 3 mJ/m2 in aqueous HF. On the contrary, GaAs(100) native oxides are found to always be hydrophobic. Tellurium n+-doped GaAs(100) yields an average of γT of 37 ± 2 mJ/m2, 96% of which is due to the Lifshitz-Van der Waals molecular interactions (γLW = 36 ± 1 mJ/m2). However, hydrophobic GaAs(100) can be made highly hydrophilic. After etching, γT increases by almost 50% to 66 ± 1.4 mJ/m2. 3LCAA shows that the γT increase is due to electron acceptor and donor interactions, while the Lifshitz-van der Waals energy γLW remains constant. IBA combining the 3.039 ± 0.01 MeV oxygen nuclear resonance with <111> channeling, shows that oxygen on Si(100) decreases by 10% after aqueous HF etching, from 13.3 ± 0.3 monolayers (ML) to 11.8 ± 0.4 ML 1 hour after etch.Te-doped GaAs(100) exhibits consistent oxygen coverage of 7.2 ± 1.4 ML, decreasing by 50% after etching to a highly hydrophilic surface with 3.6 ± 0.2 oxygen ML. IBA shows that etching does not modify the GaAs surface stoichiometry to within 1% . Combining 3LCAA with HR-IBA provides a quantitative metrology to measure how GaAs and Si surfaces can be altered to a different hydroaffinity and surface termination.

Keywords

Sisurface chemistryion beam analysisoxideIII-V
Type
Articles
Information
MRS Advances , Volume 3 , Issue 57-58: Electronic and Photonic Materials , 2018 , pp. 3403 - 3411
Copyright
Copyright © Materials Research Society 2018 

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