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Annealing Effects of ZnO Nanorods on DC Inorganic Electroluminescent Device Characteristics

Published online by Cambridge University Press:  26 February 2011

Shinya Sasaki ,
Hiroshi Miyashita ,
Takashi Kimpara ,
Tomomasa Satoh  and
Takashi Hirate
Shinya Sasaki
Affiliation:
Department of Electrical, Electronics and Information Engineering Faculty of Engineering, Kanagawa University3–27 Rokkakubashi, Kanagawa-ku, Yokohama, 221–8686, Japan
Hiroshi Miyashita
Affiliation:
Department of Electrical, Electronics and Information Engineering Faculty of Engineering, Kanagawa University3–27 Rokkakubashi, Kanagawa-ku, Yokohama, 221–8686, Japan
Takashi Kimpara
Affiliation:
Department of Electrical, Electronics and Information Engineering Faculty of Engineering, Kanagawa University3–27 Rokkakubashi, Kanagawa-ku, Yokohama, 221–8686, Japan
Tomomasa Satoh
Affiliation:
Department of Electrical, Electronics and Information Engineering Faculty of Engineering, Kanagawa University3–27 Rokkakubashi, Kanagawa-ku, Yokohama, 221–8686, Japan
Takashi Hirate
Affiliation:
Department of Electrical, Electronics and Information Engineering Faculty of Engineering, Kanagawa University3–27 Rokkakubashi, Kanagawa-ku, Yokohama, 221–8686, Japan
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Abstract

We fabricated a DC inorganic electroluminescent (EL) device whose structure is ITO electrode / ZnS:Mn / ZnO (Mn) nanorods / p−/p++-Si(111) / Au electrode. ZnO nanorods were grown by chemical vapor deposition method combined with laser ablation. ZnS:Mn and ITO were deposited by electron-beam-deposition. We studied on annealing effects of ZnO nanorods on the electrical and electroluminescent characteristics of this device. The device without annealing showed a low breakdown voltage, and any EL emission could not be observed. On the other hand, the device with annealing showed higher impedance and higher breakdown voltage, and the EL emission from the ZnS:Mn layer was observed. An intense EL emission was observed from a peripheral of ITO electrode. An EL emission from the inside area of ITO electrode was very weak.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 829: Symposium B – Progress in Compound Semiconductor Materials IV – Electronic and Optoelectronic Applications , 2004 , B2.20
Copyright
Copyright © Materials Research Society 2005

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References

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