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Atomic Structure of Ultrathin Erbium Silicides on Si(111)

Published online by Cambridge University Press:  21 February 2011

M. Lohmeier ,
W. J. Huisman ,
G. Ter Horst ,
P. M. Zagwijn ,
A. Nishiyama ,
C. L. Nicklin ,
T. S. Turner  and
E. Vlieg
M. Lohmeier
Affiliation:
Institute for Atomic and Molecular Physics, 1098 SJ Amsterdam, the Netherlands
W. J. Huisman
Affiliation:
Institute for Atomic and Molecular Physics, 1098 SJ Amsterdam, the Netherlands
G. Ter Horst
Affiliation:
Institute for Atomic and Molecular Physics, 1098 SJ Amsterdam, the Netherlands
P. M. Zagwijn
Affiliation:
Institute for Atomic and Molecular Physics, 1098 SJ Amsterdam, the Netherlands
A. Nishiyama
Affiliation:
ULSI Research Laboratories, Toshiba Corporation, Kawasaki, Japan
C. L. Nicklin
Affiliation:
Dept. of Physics and Astronomy, University of Leicester, Leicester, United Kingdom
T. S. Turner
Affiliation:
Daresbury Rutherford Appleton Laboratories, Daresbury, United Kingdom
E. Vlieg
Affiliation:
Institute for Atomic and Molecular Physics, 1098 SJ Amsterdam, the Netherlands
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Abstract

The atomic structure of thin epitaxial erbium suicides on Si(111) substrates has been studied in situ by means of surface X-ray diffraction and medium-energy ion scattering. In the sub-monolayer range, a two-dimensional (2D) suicide is formed within a 1 × 1 unit cell, with the Er atoms occupying T4 sites and a Si bilayer on top which is 180° rotated with respect to the bulk (5-type). Suicide layers with a thickness of 3 monolayers exhibit a regular network of Si vacancies which release the compressive strain of the graphite-like Si layers between adjacent Er layers. This results in a √3 × √3 R 30° unit cell, in which 3 out of 5 Si atoms are displaced towards the vacancy, and in which 3 Er atoms relax away from the vacancy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 355: Symposium B1 – Evolution of Thin-Film and Surface Structure and Morphology , 1994 , 281
Copyright
Copyright © Materials Research Society 1995

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References

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