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Changing Segregation Coefficients During Ion Beam Induced Epitaxy of Amorphous Si

Published online by Cambridge University Press:  26 February 2011

J. S. Custer ,
Michael O. Thompson ,
D. C. Jacobson  and
J. M. Poate
J. S. Custer
Affiliation:
Dept. of Materials Science and Engineering, Cornell University, Ithaca, NY 14853 Now at: FOM Institute for Atomic and Molecular Physics, 1098 SJ Amsterdam, the Netherlands
Michael O. Thompson
Affiliation:
Dept. of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
D. C. Jacobson
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. M. Poate
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

Ion beam induced epitaxial crystallization of Au and Ag doped amorphous Si results in segregation and trapping of the impurity. Combining the measured interface velocity and impurity profiles in segregation simulations provides a measure of the segregation coefficient k during growth. To adequately match the experimental profiles, k must increase during the early stage of growth until saturating at a temperature dependent value. This segregation process cannot be explained within standard models where k depends on the inteface velocity (kinetic trapping) or the interface impurity concentration (thermodynamic solubility). Instead the data suggests that the number of trapping sites at the interface increases during the initial stages of ion beam induced growth. We present several possible mechanisms for this trapping increase and discuss their significance in ion beam and thermal epitaxy models.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 201: Symposium A – Surface Chemistry and Beam-Solid Interactions , 1990 , 363
Copyright
Copyright © Materials Research Society 1991

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