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Characterization and Comparison of 4H-SiC(1120) and 4H-SiC(0001) 8° Off-Axis Substrates and Homoepitaxial Films

Published online by Cambridge University Press:  15 March 2011

S.M. Bishop ,
E.A. Preble ,
C. Hallin ,
A. Henry ,
W. Sarney ,
H.-R. Chang ,
L. Storasta ,
H. Jacobson ,
Z.J. Reitmeier  and
B.P. Wagner
...Show all authors
S.M. Bishop
Affiliation:
Materials Research Center, North Carolina State University, Raleigh, NC 27695, USA
E.A. Preble
Affiliation:
Materials Research Center, North Carolina State University, Raleigh, NC 27695, USA
C. Hallin
Affiliation:
Dept. of Phys. and Meas. Tech., Linköping University, SE-531 83, Linköping, Sweden
A. Henry
Affiliation:
Dept. of Phys. and Meas. Tech., Linköping University, SE-531 83, Linköping, Sweden
W. Sarney
Affiliation:
Army Research Lab – SEDD, AMSRL-SE-EI, Adelphi, MD 20783, USA
H.-R. Chang
Affiliation:
Rockwell Scientific Company, Power Electronics Department, Thousand Oaks, CA 91360, USA
L. Storasta
Affiliation:
Dept. of Phys. and Meas. Tech., Linköping University, SE-531 83, Linköping, Sweden
H. Jacobson
Affiliation:
Dept. of Phys. and Meas. Tech., Linköping University, SE-531 83, Linköping, Sweden
Z.J. Reitmeier
Affiliation:
Materials Research Center, North Carolina State University, Raleigh, NC 27695, USA
B.P. Wagner
Affiliation:
Materials Research Center, North Carolina State University, Raleigh, NC 27695, USA
E. Janzén
Affiliation:
Dept. of Phys. and Meas. Tech., Linköping University, SE-531 83, Linköping, Sweden
R.F. Davis
Affiliation:
Materials Research Center, North Carolina State University, Raleigh, NC 27695, USA
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Abstract

Homoepitaxial films of 4H-SiC(1120) and 8° off-axis 4H-SiC(0001) have been grown and characterized. The number of domains and the range of full-width half-maxima values of the x-ray rocking curves of the [1120]-oriented wafers were smaller than the analogous values acquired from the (0001) materials. Hydrogen etching of the former surface for 5 and 30 minutes reduced the RMS roughness from 0.52 nm to 0.48 nm and to 0.28 nm, respectively; the RMS roughness for a 30 μm (1120) film was 0.52 nm. Micropipes in the substrates did not thread beyond the film-substrate interface. The separation distance between stacking faults was determined to be 10 μm by transmission electron microscopy. Hall mobilities and carrier concentrations of 12,200 cm2/Vs and 3.1×1014 cm−3 and 800 cm2/Vs and 7.4×1014 cm−3 were measured at 100°K and 300°K, respectively. Photoluminescence indicated high purity. 4H-SiC(1120) PiN devices exhibited average blocking voltages to 1344 V and a minimum average forward voltage drop of 3.94 V.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 815 , 2004 , J5.25
Copyright
Copyright © Materials Research Society 2004

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