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Characterization of interstitial defect clusters in ion-implanted Si

Published online by Cambridge University Press:  15 February 2011

J. L. Benton ,
S. Libertino ,
S. Coffa  and
D. J. Eaglesham
J. L. Benton
Affiliation:
Bell Laboratories, Lucent Technologies, 700 Mountain Avenue, Murray Hill, 07974-N.J.
S. Libertino
Affiliation:
Bell Laboratories, Lucent Technologies, 700 Mountain Avenue, Murray Hill, 07974-N.J.
S. Coffa
Affiliation:
CNR-IMETEM, Stradale Primosole, 50,1–95121 Catania, Italy
D. J. Eaglesham
Affiliation:
Bell Laboratories, Lucent Technologies, 700 Mountain Avenue, Murray Hill, 07974-N.J.
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Abstract

We have investigated the properties of Si interstitial clusters in ion implanted crystalline Si. Deep Level Transient Spectroscopy measurements have been used to characterize the residual damage in Si samples implanted with Si ions at fluence in the range 1×109-1×1012/cm2 and annealed at temperatures of 100–700 °C. We have found that, in the fluence and annealing temperature range where extended defects are not formed, the residual damage is dominated by Si interstitial clusters which introduce deep levels at Ev+0.36 eV and at Ev+O-53 eV. By using Si substrates with a different impurity and dopant content, we have found that C, O and B play a role in determining the defect growth kinetics but are not the main constituents of these clusters. We estimate that 40 to 125 Si self intersti-tials are stored in these clusters and believe that they are the main source of Si self-inter-stitials in transient enhanced diffusion phenomena occurring in the absence of {311} or extended defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 469: Symposium E – Defects and Diffusion in Silicon Processing , 1997 , 193
Copyright
Copyright © Materials Research Society 1997

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References

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