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Chemical Beam Epitaxial Growth and Capacitance-Voltage Characterization of Si δ-Doped GaAs

Published online by Cambridge University Press:  26 February 2011

T. H. Chiu ,
E. F. Schubert ,
J. E. Cunningham ,
W. T. Tsang  and
B. Tell
T. H. Chiu
Affiliation:
AT–T Bell Laboratories, Crawfords Corner Road, Holmdel, NJ 07733
E. F. Schubert
Affiliation:
AT–T Bell Laboratories, Crawfords Corner Road, Holmdel, NJ 07733
J. E. Cunningham
Affiliation:
AT–T Bell Laboratories, Crawfords Corner Road, Holmdel, NJ 07733
W. T. Tsang
Affiliation:
AT–T Bell Laboratories, Crawfords Corner Road, Holmdel, NJ 07733
B. Tell
Affiliation:
AT–T Bell Laboratories, Crawfords Corner Road, Holmdel, NJ 07733
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Abstract

High quality GaAs layers have been grown by chemical beam epitaxy using triethylgallium and arsine. Undoped GaAs epilayer with net acceptor concentration NA - ND = 3}10 14cm-3 has been obtained at a low growth temperature of 500°C. Si dopant diffusion at such low temperature during growth is negligible. Using monolayer doping technique epilayers with Si impurities localized in a 2-dimensional plane were prepared. Capacitance-voltage profiling showed a high sheet electron concentration of lx1013cm-2 and peak widths of 22Å and 18Å at 300K and 77K, respectively, which are the narrowest ever reported. For samples grown or annealed at higher temperatures, significant impurity diffusion was observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 475
Copyright
Copyright © Materials Research Society 1988

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References

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