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Chemical Effects of substrate Temperature and Feed Gas Composition on Ion Beam Deposited AlN and AlN:H

Published online by Cambridge University Press:  21 February 2011

L. Huang ,
X. D. Wang ,
K. W. Hipps ,
U. Mazur ,
J. T. Dickinson  and
R. Heffron
L. Huang
Affiliation:
Materials Science Program, Washington State University, Pullman, WA 99164-4620, USA
X. D. Wang
Affiliation:
Materials Science Program, Washington State University, Pullman, WA 99164-4620, USA
K. W. Hipps
Affiliation:
Materials Science Program, Washington State University, Pullman, WA 99164-4620, USA
U. Mazur
Affiliation:
Materials Science Program, Washington State University, Pullman, WA 99164-4620, USA
J. T. Dickinson
Affiliation:
Materials Science Program, Washington State University, Pullman, WA 99164-4620, USA
R. Heffron
Affiliation:
Materials Science Program, Washington State University, Pullman, WA 99164-4620, USA
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Abstract

Direct ion beam sputter deposition of alN is studied using both pure nitrogen and a 75% N2/25% H2 mixture as the feed gas for the ion gun. the chemical characteristics of these films are probed using infrared spectroscopy and chemical etching. the presence of al-N2 species is associated with reactive and highly defective films. the presence of NHX species increases by several orders of magnitude the rate at which alN film are etched by base. However, stoichiometric and low defect alN films prepared by depositing alN:H onto substrates heated to 200 °C have reactivities similar to the best alN films produced in the absence of hydrogen.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 388: Symposium Q – Film Synthesis and Growth Using Energetic Beams , 1995 , 367
Copyright
Copyright © Materials Research Society 1995

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References

1 Yim, W.M., Stofko, E.J., Zanzucchi, P.J., Pankove, J.I., M. Ettenberg, Gilbert, S.L., J. appl. Phys. 44, 292 (1973).Google Scholar
2 Sheppard, L.M., Ceramic Bulletin 69, 1801 (1990).Google Scholar
3 Ivanko, A.A. in Handbook of Hardness Data; edited by Samsonov, G.V. (Keter Press, Jerusalem, 1971).Google Scholar
4 Mazur, U., work in progress.Google Scholar
5 Azema, N., Durand, R., Dupuy, C., and Cot, L., J. Euro. Ceram. Soc. 8, 291 (1991).Google Scholar
6 Hatwar, K. and Pian, T.R., in Ion Beam Processing of Materials., edited by Hubler, G.K. and White, C.W. (Mater. Res. Soc. Symp. Proc. 121, Pittsburgh, PA, 1988), p. 557.Google Scholar
7 Katnani, A.D. and Papathomas, K.I., J. Vac. Sci. Technol. A 5, 1335 (1987).Google Scholar
8 Bellosi, A., Landi, E., and Tampieri, A., J. Mater. Res. 8, 565 (1993).Google Scholar
9 Wang, X.D., Hipps, K.W., and Mazur, U., Langmuir 8, 1347 (1992).Google Scholar
10 Harper, J.M., Cuomo, J.J., and Hentzell, H.T., J. appl. Phys. 58, 550 (1985).Google Scholar
11 Hentzell, H.T., Harper, J.M., and Cuomo, J.J., J. appl. Phys. 58, 556 (1985).Google Scholar
12 Windischmann, H., Thin Solid Films 154, 159 (1987).Google Scholar
13 Aita, C.R. and Tait, W.S., Nanostructured Materials 1, 269 (1992).Google Scholar
14 Hasegawa, F., Takahashi, T., Kubo, K., and Nannichi, Y., Jap. J. Appl. Phys. 9, 1555 (1987).Google Scholar
15 Mazur, U. Langmuir 6, 1331 (1990).Google Scholar
16 Mazur, U. and Cleary, A. J. Phys. Chem. 94, 189 (1990).Google Scholar
17 Wang, X.D., Hipps, K.W., and Ursula, Mazur, J. Phys. Chem. 96, 8485 (1992).Google Scholar
18 Wang, X.D., Hipps, K.W., Dickinson, J.T., and Mazur, U., J. Mater. Res., 9, 1449 (1994).Google Scholar
19 Wang, X.D., Jiang, W., Norton, M.G., and Hipps, K.W., Thin Solid Films, 251, 121 (1994).Google Scholar