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Comparison of N- And P-Type Ingaas/Inp Quantum Well Infrared Photodetectors

Published online by Cambridge University Press:  10 February 2011

D.K. Sengupta ,
J.I. Malin ,
S.L. Jackson ,
W. Fang ,
W. Wu ,
H.C. Kuo ,
C. Rowe ,
S.L. Chuang ,
K.C. Hsieh  and
J.R. Tucker
...Show all authors
D.K. Sengupta
Affiliation:
Department of Electrical and Computer Engineering and Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, I1 61801
J.I. Malin
Affiliation:
Department of Electrical and Computer Engineering and Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, I1 61801
S.L. Jackson
Affiliation:
Department of Electrical and Computer Engineering and Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, I1 61801
W. Fang
Affiliation:
Department of Electrical and Computer Engineering and Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, I1 61801
W. Wu
Affiliation:
Department of Electrical and Computer Engineering and Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, I1 61801
H.C. Kuo
Affiliation:
Department of Electrical and Computer Engineering and Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, I1 61801
C. Rowe
Affiliation:
Department of Electrical and Computer Engineering and Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, I1 61801
S.L. Chuang
Affiliation:
Department of Electrical and Computer Engineering and Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, I1 61801
K.C. Hsieh
Affiliation:
Department of Electrical and Computer Engineering and Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, I1 61801
J.R. Tucker
Affiliation:
Department of Electrical and Computer Engineering and Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, I1 61801
J. W. Lyding
Affiliation:
Department of Electrical and Computer Engineering and Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, I1 61801
M. Feng
Affiliation:
Department of Electrical and Computer Engineering and Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, I1 61801
G.E. Stillman
Affiliation:
Department of Electrical and Computer Engineering and Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, I1 61801
H.C. Liu
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario K1AOR6, Canada
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Abstract

Over an order of magnitude reduction in dark current was observed for gas-source molecular beam epitaxially (GSMBE) grown, lattice-matched n- and p-type InGaAs/InP quantum-well infrared photodetectors (QWIPs). Peak spectral response at 8.93 and 4.55 μm for n- and p-type QWIPs, respectively, open the possibility of dual-band monolithic integration under identical GSMBE growth conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 421: Symposium D – Compound Semiconductor Electronics and Photonics , 1996 , 203
Copyright
Copyright © Materials Research Society 1996

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References

1. Gunapala, S.D., Levine, B.F., Ritter, D., Hamm, R., and Panish, M.B., Appl. Phys. Lett. 58, 20224 (1991)Google Scholar
2. Andersson, J.Y., Lundqvist, L., Paska, Z. F., Streubel, K., and Wallin, J., Proc. of SPIE 1762, 216 (1992)Google Scholar
3. Jackson, S.L., Baillargeon, J.N., Curtis, A.P., Liu, X., Baker, J.E., Malin, J.I., Hseih, K.C., Bishop, S.G., Cheng, K.Y., and Stillman, G.E., J. Vac. Sci. Technol. B 11, 1045 (1993).Google Scholar
4. Tsai, K.L., Cheng, K.H., Lee, C.P., Huang, K.F., Tsang, J.S., and Chen, H.R., Appl. Phys. Lett. 62, 3504 (1993).Google Scholar
5. Levine, B.F., Gunapala, S.D., Kuo, J.M., Pei, S.S., and Hui, S., Appl. Phys. Lett. 59, 1864 (1991).Google Scholar
6. Choi, K.K., Levine, B.F., Bethea, C.G., Walker, J., and Malik, R.J., Appl. Phys. Lett. 50, 1814, (1987).Google Scholar