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Coupled Diffusion Equation Solutions To Ag/Ge (L 11) And Cs/Si (100) Interactions

Published online by Cambridge University Press:  15 February 2011

J. A. Venables ,
R. Persaud ,
F. L. Metcalfe ,
R. H. Milne  and
M. Azim
J. A. Venables
Affiliation:
School of MaPS, University of Sussex, Brighton BN1 9QH, England.
R. Persaud
Affiliation:
School of MaPS, University of Sussex, Brighton BN1 9QH, England.
F. L. Metcalfe
Affiliation:
School of MaPS, University of Sussex, Brighton BN1 9QH, England.
R. H. Milne
Affiliation:
School of MaPS, University of Sussex, Brighton BN1 9QH, England.
M. Azim
Affiliation:
School of MaPS, University of Sussex, Brighton BN1 9QH, England.
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Abstract

Surface diffusion has been studied in the Ag/Ge (111) and Cs/Si (100) systems using UHV-SEM based techniques, biassed secondary electron imaging (b-SEI), Micro-AES and RHEED. Ag and Cs were deposited through a mask of holes held close to the substrate at room temperature, and annealed at higher temperatures Ta. Under certain conditions, the Ag and Cs patches split into two distinct regions with different sub-Monolayer (ML) coverages θ, observable using b-SEI; the sensitivity for Cs/Si (100) is below 0.5% ML. These patch widths were measured as f(ø,Ta,t), and effective diffusion coefficients extracted. Both systems were modelled using coupled diffusion equations, involving adatoms in two different surface phases. Comparison with experiment yields activation energies for adsorption (Ea) and diffusion (Ed).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 317: Symposium B – Mechanisms of Thin Film Evolution , 1993 , 83
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

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