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Crystal Structure Change with Applied Electric Field for (100)/(001)-oriented Polycrystalline Lead Zirconate Titanate Films

Published online by Cambridge University Press:  15 February 2013

Ayumi Wada ,
Yoshitaka Ehara ,
Shintaro Yasui ,
Takahiro Oikawa ,
Mitsumasa Nakajima ,
Megu Wada ,
P. S. Sankara Rama Krishnan ,
Soichiro Okamura ,
Ken Nishida  and
Takashi Yamamoto
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Ayumi Wada
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama, Kanagawa 226-8502, Japan Department of Applied Physics, Faculty of Science, Tokyo University of Science, Shinjuku-ku, Tokyo 162-8601, Japan
Yoshitaka Ehara
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama, Kanagawa 226-8502, Japan
Shintaro Yasui
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama, Kanagawa 226-8502, Japan
Takahiro Oikawa
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama, Kanagawa 226-8502, Japan
Mitsumasa Nakajima
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama, Kanagawa 226-8502, Japan
Megu Wada
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama, Kanagawa 226-8502, Japan
P. S. Sankara Rama Krishnan
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama, Kanagawa 226-8502, Japan
Soichiro Okamura
Affiliation:
Department of Applied Physics, Faculty of Science, Tokyo University of Science, Shinjuku-ku, Tokyo 162-8601, Japan
Ken Nishida
Affiliation:
Department of Communications Engineering, National Defense Academy of Japan, Yokosuka, Kanagawa 239-8686, Japan
Takashi Yamamoto
Affiliation:
Department of Communications Engineering, National Defense Academy of Japan, Yokosuka, Kanagawa 239-8686, Japan
Takeshi Kobayashi
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8564, Japan
Hitoshi Morioka
Affiliation:
Bruker AXS K. K., Yokohama, Kanagawa 221-0022, Japan
Hiroshi Funakubo
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama, Kanagawa 226-8502, Japan
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Abstract

Crystal structure change with an applied electric field was investigated by Raman spectroscopy and X-ray diffraction (XRD) for the 1 μm-thick (100)/(001) one-axis oriented tetragonal Pb(Zr0.3Ti0.7)O3 films prepared on Pt-covered (100) Si substrates by chemical solution deposition technique. As-deposited films were under the strained condition in good agreement with the estimation from the thermal strain applied under the cooling process after the deposition from the Curie temperature to the room temperature. This strain was ascertained to be relaxed by an applied electric field in accompanying with the dramatic increase of the volume fraction of (001) orientation. These results demonstrate the importance of the crystal structure measurement not only as-deposited films, but also after applied electric field, such as after poling.

Keywords

Raman spectroscopyx-ray diffraction (XRD)sol-gel
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1507: Symposium AA – Oxide Nanoelectronics and Multifunctional Dielectrics , 2013 , mrsf12-1507-aa12-21
Copyright
Copyright © Materials Research Society 2013

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References

REFERENCES

Trolier-McKinstry, S. et al. ., J. Electroceramics 12, 7–17 (2004).CrossRefGoogle Scholar
Muralt, P. et al. ., J. Amer. Ceram. Soc. 91, 5, 1385–1396 (2008).CrossRefGoogle Scholar
Haun, M. J. et al. ., Ferroelectrics. 99, 63–86 (1989).CrossRefGoogle Scholar
Nagarajan, V. et al. ., Appl. Phys. Lett. 81, 4215–4217 (2002).CrossRefGoogle Scholar
Ehara, Y. et al. ., Appl. Phys. Lett. 98, 141914–3 (2011).CrossRefGoogle Scholar
Kobayashi, T. et al. ., Thin Solid Films 489, 74–78 (2005).CrossRefGoogle Scholar
Morioka, H. et al. ., Jpn. J. Appl. Phys. 48, 09KA03-1–5 (2009).CrossRefGoogle Scholar
Nakajima, M. et al. ., Appl. Phys. Lett. 97, 181907–3 (2010).CrossRefGoogle Scholar
Otsu, M. et al. ., Chem. Soc. Jpn. 10, 789–795 (1995).Google Scholar
Nakaki, H. et al. ., Appl. Phys. Lett. 91, 112904-1–3 (2007).CrossRefGoogle Scholar
Kilho, L. et al. ., Annu. Rev. Mater Res. 36, 81–116 (2006).Google Scholar