Hostname: page-component-848d4c4894-wg55d Total loading time: 0 Render date: 2024-06-10T14:11:44.383Z Has data issue: false hasContentIssue false
  • English
  • Français

Diamond Homoepitaxy Kinetics: Growth, Etching, and the Role of Oxygen

Published online by Cambridge University Press:  21 February 2011

Robin E. Rawles  and
Mark P. D'Evelyn
Robin E. Rawles
Affiliation:
Rice University, Department of Chemistry, Houston, TX, 77251–1892, Departments of Chemistry and Materials Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180–3590
Mark P. D'Evelyn
Affiliation:
General Electric Corporate Research and Development, P.O. Box 8, Schenectady, NY 12301, Departments of Chemistry and Materials Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180–3590
Get access

Abstract

Growth and etch rates for diamond homoepitaxy have been measured in situ using Fizeau interferometry. Experiments were conducted in a hot-filament reactor using hydrogen, methane, and oxygen feed gases at a reactor pressure of 25 torr. The substrate temperature dependence for growth on diamond(lOO) was studied for 0.5% and 1% CH4 and 0–0.44% O2. Apparent activation energies of 17 and 5 kcal/mol were determined for growth from 0.5% and 1% CH4 in hydrogen, over the ranges of 700 – 1000 °C and 800 – 1050 °C, respectively. When a minimal amount of Oxygen was added to the feedstock, the growth-rate behavior was similar for that with pure methane. With greater amounts of added oxygen, growth rates were higher than those without Oxygen at low temperatures, proceeded through a maximum, and then decreased until etching was observed at high temperatures. Similar behavior was observed for growth from 1% CH4 with and without oxygen. We also measured the temperature dependence for etching of homoepitaxial diamond films in hydrogen with 0–0.1% O2, and observed etch rates of 0.01 – 0.1 microns/hr in the range of 950 – 1150 °C. We propose that oxygen facilitates diamond growth at low temperatures by enhancing the removal of both sp2- and sp3-bonded “errors” and/or by increasing the efficiency of carbon incorporation by roughening the diamond surface, and that these etching processes become dominant at high temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 279
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Hirose, Y. and Terasawa, Y., Jpn. J. Appl. Phys. 25, 519 (1986).Google Scholar
2. Chang, C.-P., Flamm, D. L., Ibbotson, D. E., and Mucha, J. A., J. Appl. Phys. 63, 1744 (1988).Google Scholar
3. Saito, Y., Sato, K., Tanaka, H., Fujita, K., and Matsuda, S., J. Mater. Sci. 23, 842 (1988).Google Scholar
4. Liou, Y., Inspektor, A., Weimer, R., Knight, D., and Messier, R., J. Mater. Res. 5, 2305 (1990).Google Scholar
5. Wei, J., Kawarada, H., Suzuki, J., and Hiraki, A., J. Cryst. Growth 99, 1201 (1990).Google Scholar
6. Bachmann, P. K., Leers, D., and Lydtin, H., Diamond Rel. Mat. 1, 1 (1991).Google Scholar
7. Rudder, R. A., Hudson, G. C., Posthill, J. B., Thomas, R. E., Hendry, R. C., Malta, D. P., Markunas, R. J., Humphreys, T. P., and Nemanich, R. J., Appl. Phys. Lett. 60, 329 (1992).Google Scholar
8. Dubbeldee Harris Diamond Corp., Mt. Arlington, New Jersey, USA.Google Scholar
9. Rawles, R. E., Kittrell, C., and D'Evelyn, M. P., in Diamond Materials, edited by Dismukes, J. P. and Ravi, K. V. (The Electrochemical Society, Pennington, New Jersey, 1993), pp. 269–275.Google Scholar
10. Pan, G., Chu, C.J., Margrave, J. L., and Hauge, R. H., submitted to Diamond Rel. Mat.Google Scholar
11. Chu, C. J., Hauge, R. H., Margrave, J. L., and D'Evelyn, M. P., Appl. Phys. Lett. 61, 1393 (1992).Google Scholar
12. Kweon, D. -W., Lee, J. -Y., and Kim, D., J. Appl. Phys. 69, 8329 (1991).Google Scholar
13. Kondoh, E., Ohta, T., Mitomo, T., and Ohtsuka, K., J. Appl. Phys. 72, 705 (1992) and 73, 3041 (1993).Google Scholar
14. Kim, J. W., Baik, Y. -J., Eun, K. Y., and Yun, D. N., Thin Solid Films 212, 104 (1992).Google Scholar
15. Weimer, W. A., Cerio, F. M., and Johnson, C. E., J. Mater. Res. 6, 2134 (1991).Google Scholar
16. Spitsyn, B. V. and Bouilov, L. L., in Diamond and Diamond-Like Materials Synthesis, edited by Johnson, G. U., Badzian, A. R., and Geis, M. W., (Materials Research Society, Pittsburgh, PA, 1988), pp. 3–14.Google Scholar
17. Zhu, M., Hauge, R. H., Margrave, J. L., and D'Evelyn, M. P., in Diamond Materials, edited by Dismukes, J. P. and Ravi, K. V. (The Electrochemical Society, Pennington, New Jersey, 1993), pp. 138–145.Google Scholar