Hostname: page-component-848d4c4894-p2v8j Total loading time: 0 Render date: 2024-06-08T05:15:56.777Z Has data issue: false hasContentIssue false

Diamond Synthesis in a 50 kW Inductively Coupled Atmospheric Pressure Plasma Torch

Published online by Cambridge University Press:  21 February 2011

T.G. Owano
Affiliation:
Research Assistant, High Temperature Gasdynamics Laboratory, Department of Mechanical Engineering, Stanford University, 94305.
C.H. Kruger
Affiliation:
Associate Dean of Academic Affairs, Professor of Mechanical Engineering, High Temperature Gasdynamics Laboratory, Stanford University, 94305.
M.A. Cappelli
Affiliation:
Assistant Professor, High Temperature Gasdynamics Laboratory, Department of Mechanical Engineering, Stanford University, 94305.
Get access

Abstract

Polycrystalline diamond coatings have been deposited on metal substrates using a 50 kW atmospheric pressure inductively coupled plasma torch. The argon-hydrogen-methane plasma generated has a free stream active area of 35 cm2 and a temperature of approximately 4500 K. Growth rates are of the order of 10 μm/hour. The growth morphology is found to vary significantly with reactor processing conditions as well as gasdynamic effects near the substrate surface. In this work, we explore the effects of varying the parameters controlling both the surface kinetics (surface temperature and near surface flowfield) and gas phase chemistry (initial gas feed composition and plasma temperature). Stagnation point and flat plate boundary layer flows are investigated. Scanning electron microscopy indicates that well facetted crystals are obtained with growth along the 100 and 111 planes. Nearly continuous films are also formed and found to be of lower quality. Raman scattering data is used to/compare the bonding structure to that obtained by other various deposition techniques.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Bundy, F.P., Strong, H.T., and Wentorf, R.H. Jr., Nature 176, 51 (1955)Google Scholar
2. Liander, H. and Lundblad, E., Arkiv. Kemi. 16, 139 (1960).Google Scholar
3. DiCarli, P.S. and Jamieson, J.C., Science 133, 182 (1961).Google Scholar
4. Koshino, N., Kurihara, K., Kawarda, M., and Sasaki, K., Extended Abstracts from the Spring Meeting of the Materials Research Society (Materials Research Society, Pittsburgh, PA), p.85, April 5–9, Reno, Nevada (1988).Google Scholar
5. Matsumoto, S., Extended Abstracts from the Spring Meeting of the Materials Research Society (Materials Research Society, Pittsburgh, PA), p. 119, April 5–9, Reno, Nevada (1988).Google Scholar
6. Akatsuka, F., Hirose, Y. and Komaki, K., Jap. Journal of Appl. Phys. 27, L1600 (1988).Google Scholar
7. Matsumoto, S., Hino, H. and Kobayashi, T., Appl. Phys. Lett. 51, 737 (1987).Google Scholar
8. TAFA Corp., Concord, N.H., private communications.Google Scholar
9. Mitchner, M. and Kruger, C.H., Partially Ionized Gases (J. Wiley and Sons, New York 1973) p. 47 (1973).Google Scholar
10. Owano, T.G., Gordon, M.H. and Kruger, C.H., submitted to Phys. Fluids B; Plasma Physics, Dec. 1989.Google Scholar
11. Vidal, C.R., Cooper, J., and Smith, E.W., Astro. Jour. Suppl. Ser. No. 214,25,37136 (1973).Google Scholar
12. Rosner, D.E., Annual Rev. Mat. Sci. 2, 573 (1972).Google Scholar
13. Hsu, W.G., J. Vac. Sci. Technol. A 6, 1803 (1988).Google Scholar