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Dielectric-barrier discharge plasma source and its application to synthesis of diamond like carbon films

Published online by Cambridge University Press:  01 February 2011

Xinpeng Wang
Affiliation:
david011608@hotmail.com, University of Puerto Rico, Department of Physics, San Juan, 00931, Puerto Rico
Xiaoliang Tang
Affiliation:
tangxiaoliangdhu@163.com, Donghua University, Physics Department, Shanghai, 201620, China, People's Republic of
Peter Xianping Feng
Affiliation:
pfeng@cnnet.upr.edu, University of Puerto Rico, Departmen of Physics, PO Box 23343, Dept of Physics,, Univ. of Puerto Rico, Rio Piedras Camp., San Juan, 00931, Puerto Rico, 787-764-0000, ext. 2719
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Abstract

Dielectric barrier discharge plasma sources have been studied and used for syntheses of diamond like carbon thin films. The plasma electrical properties under different gases concentrations and pressures were diagnosed. Based on the results of characterizations, dielectric barrier discharge plasma at different methane-hydrogen-argon gas ratios was used to synthesize large area of diamond like carbon films. Experimental data indicate that only at argon concentration equal to or less than 75% diamond like carbon film fabrication could be accomplished, which has been confirmed based on the Raman spectra and their hardness measurements, whereas high argon content during deposition would result in graphite type of thin films.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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References

REFERENCES

1. Kogoma, M., Okazaki, S.., Inomata, T., Contr. Papers of HAKONE VI, Cork, Ireland, 31st. Aug.–2nd. Sept., 8387 (1998)Google Scholar
2. Li, Z., Feng, P. X., Yan, Y. C., and Xie, H. K., J. Donghua Univ. 30, 21 (2004)Google Scholar
3. Klages, C.P., Höpfner, K., Kläke, N. and Thyen, R., “Functional group retention in DBD-based plasma polymerization” klages@ist.fhg.de, SVC Technical Conference 2000,Google Scholar
4. Liu, H. Z., Cui, N. Y., Brown, N. M. D. and Meenan, B. J., Surf. Coat. Technol. 185, 311 (2004)Google Scholar
5. Gessner, C., Bartels, V., Betker, T., Matucha, U., Penache, C. and Klages, C. P., Thin solid films 459, 118 (2004)Google Scholar
6. Zhang, R. B., Yan, W., Jie, L., Li, G. F., Li, T. F. and Zhou, Z. G., J. Adv. Oxid. Technol. 7(2), 172 (2004)Google Scholar
7. Oehr, C., Müller, M., Elkin, B., Hegemann, D. and Vohrer, U., Surf. Coat. Technol., 25, 116119 (1999)Google Scholar
8. Kim, Y., Hong, S. H., Cha, N. S., Song, Y. H. and Kim, S. J., J. Adv. Oxid. Technol. 6(1), 17 (2003)Google Scholar
9. Williamson, J. M., Bletzinger, P. and Ganguly, B. N., J. Phys. D Appl. Phys. 37(12), 1658 (2004)Google Scholar
10. Uyama, Y., Kato, K., and Ikada, Y., Adv. Polym. Sci. 137, 139 (1998)Google Scholar
11. Liu, D. P., Yu, S. J., Ma, T. C., Song, Z. M. and Yang, X. F., Jpn. J. Appl. Phys. Part 1-Regular papers, Short notes & Review papers 39(6A), 3359 (2000)Google Scholar
12. Ou, Q. R., Meng, Y. D., Xu, X., Shu, X. S. and Ren, Z. X., Chinese Phys Lett 21(7), 1317 (2004)Google Scholar
13. Liu, D. P., Benstetter, G., Liu, Y. H., Yang, X. F., Yu, S. J. and Ma, T. C., New Diam. Front. C. Tec. (4), 191 (2003)Google Scholar