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Dynamics of the Nitrogen Bound Excitons in 6H and 3C SiC

Published online by Cambridge University Press:  21 February 2011

J. P. Bergman ,
C. I. Harris ,
O. Kordina ,
A. Henry  and
E. Janzén
J. P. Bergman
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SWEDEN
C. I. Harris
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SWEDEN
O. Kordina
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SWEDEN
A. Henry
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SWEDEN
E. Janzén
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SWEDEN
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Abstract

We have measured the photoluminescence decay time of the bound excitons at the neutral nitrogen donors in the 6H and 3C polytypes of SiC. At 2K the decay times are 8.0 ns, 1.8 ns and 1.5 ns, for the P, R and S bound excitons in 6H SiC. For the nitrogen exciton in 3C, we find a decay time of 160 ns. These values are faster than previously reported for shallow donors in other indirect bandgap materials such as Si or GaP. Each of the observed decay times is found to be independent of the doping level in the sample, is temperature independent at low temperatures but decrease when the bound excitons are thermally ionised. The decay time related to different donor levels in 6H exhibits a strong dependence on the donor binding energy. We suggest that the dominant mechanism responsible for the observed decay time is a phonon-less Auger process. In high-purity 6H samples we have also measured the free exciton decay time at low temperatures to be 12 ns.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 541
Copyright
Copyright © Materials Research Society 1994

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