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Effect of Superlattice Doped Layers on the Performance of a-Si:H P-I-N Solar Cells

Published online by Cambridge University Press:  28 February 2011

Rajeewa R. Arya ,
Anthony Catalano  and
James O'dowd
Rajeewa R. Arya
Affiliation:
Solarex Corporation, Thin Film Division, 826 Newtown-Yardley Road, Newtown, PA 18940
Anthony Catalano
Affiliation:
Solarex Corporation, Thin Film Division, 826 Newtown-Yardley Road, Newtown, PA 18940
James O'dowd
Affiliation:
Solarex Corporation, Thin Film Division, 826 Newtown-Yardley Road, Newtown, PA 18940
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Abstract

Superlattice doped layers of the type ABABAB … have been prepared where A is the wide bandgap a-Si:C:H doped layer and B is the narrow bandgap a-Si:C:H or a-Si:H doped layer. The bandgaps of the individual layers were modulated by changing the gas phase composition of methane during the plasma deposition. By varying the structure of the films, superlattice p-layers with resistivities in the range of 106 - 107 ohm-cm with optical bandgaps of 2.0 - 2.4 eV, and activation energies of 0.35 - 0.48 eV and superlattice n-layers with resistivities in the range of 104 - 105 ohm-cm with optical bandgaps of 1.86 - 2.03 eV and activation energies of 0.38 - 0.47 eV have been obtained.

P-I-N solar cells have been prepared with both p and n layers comprised of superlattice structures. Conversion efficiencies as high as 10.86% have been achieved under simulated AM1.5 Global conditions. Measurements reveal a marked improvement in both built-in voltage and carrier collection length.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 517
Copyright
Copyright © Materials Research Society 1986

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References

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