Hostname: page-component-848d4c4894-nr4z6 Total loading time: 0 Render date: 2024-06-08T02:20:58.088Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of TiN ARC on Electromigration Performance of Tungsten Plug Via

Published online by Cambridge University Press:  22 February 2011

Nguyen D. Bui ,
Van H. Pham ,
D. David Forsythe ,
Raymond T. Lee  and
John T. Yue
Nguyen D. Bui
Affiliation:
Advanced Micro Devices, One AMD Place, P.O. Box 3453, MS 143, Sunnyvale, California 94088, (408) 749-3963, E-mail:, Nguyen.Bui@amd.com
Van H. Pham
Affiliation:
Advanced Micro Devices, One AMD Place, P.O. Box 3453, MS 143, Sunnyvale, California 94088, (408) 749-3963
D. David Forsythe
Affiliation:
Advanced Micro Devices, One AMD Place, P.O. Box 3453, MS 143, Sunnyvale, California 94088, (408) 749-3963
Raymond T. Lee
Affiliation:
Advanced Micro Devices, One AMD Place, P.O. Box 3453, MS 143, Sunnyvale, California 94088, (408) 749-3963
John T. Yue
Affiliation:
Advanced Micro Devices, One AMD Place, P.O. Box 3453, MS 143, Sunnyvale, California 94088, (408) 749-3963
Get access

Abstract

The effect of TiN Anti-Reflective Coating (ARC) layer capping of metal, in a multilevel interconnect system, on the reliability of the tungsten (W) plug has been investigated. EM study on Kelvin via showed that the thin TiN ARC Kelvin via lifetime exhibited a reduction of one order of magnitude compared to that of the thicker ARC thickness (1000Å) when they were stressed in a certain direction. A new testing technique, used to investigate the effect of ARC thickness on the W-plug electromigration (EM) performance, is discussed. The simulation results of current distribution confirmed the proposed failure model of EM performance of W-plug via with different ARC thickness.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 338: Symposium – Materials Reliability in Microelectronics IV , 1994 , 471
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERNCES

[1] Wang, Martin S., et al., Symp. on VLSI Technology, p. 41, 1991 Google Scholar
[2] Davari, B., et al., IEDM Tech. Dig., p. 61, 1989 Google Scholar
[3] Kishimoto, Koji, et al., VMIC Proceedings, p. 149, 1992 Google Scholar
[4] Ballance, David S., et al., VMIC Proceedings, p. 180, 1992 Google Scholar
[5] Kwork, T., et al., VMIC Proceedings, p. 106, 1990 Google Scholar
[6] Estabil, J., et al., VMIC Proceedings, p. 242, 1991 Google Scholar
[7] Bui, N., et al., VMIC Proceedings, p. 142, 1990 Google Scholar