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Effects of Lateral Limited Area and Substrate Compliance on Strain Distribution and Critical Thickness of Sige Film on Si Mesa Substrates

Published online by Cambridge University Press:  15 February 2011

Zhang Rong ,
Huang Hongbin ,
Shi Yi ,
Yang Kai ,
Gu Shulin ,
Wang Ronghua ,
Zhu Shunming  and
Zheng Youdou
Zhang Rong
Affiliation:
Department of Physics and Institute of Solid State Physics, Nanjing University, Nanjing 210008, P.R. China
Huang Hongbin
Affiliation:
Department of Physics and Institute of Solid State Physics, Nanjing University, Nanjing 210008, P.R. China
Shi Yi
Affiliation:
Department of Physics and Institute of Solid State Physics, Nanjing University, Nanjing 210008, P.R. China
Yang Kai
Affiliation:
Department of Physics and Institute of Solid State Physics, Nanjing University, Nanjing 210008, P.R. China
Gu Shulin
Affiliation:
Department of Physics and Institute of Solid State Physics, Nanjing University, Nanjing 210008, P.R. China
Wang Ronghua
Affiliation:
Department of Physics and Institute of Solid State Physics, Nanjing University, Nanjing 210008, P.R. China
Zhu Shunming
Affiliation:
Department of Physics and Institute of Solid State Physics, Nanjing University, Nanjing 210008, P.R. China
Zheng Youdou
Affiliation:
Department of Physics and Institute of Solid State Physics, Nanjing University, Nanjing 210008, P.R. China
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Abstract

In this paper, we calculated theoretically the strain distribution and the critical thickness of the SiGe epilayers on Si(100) mesa structural substrates by considering the effect of the compliance of substrates, along with the effect of the limited area, and found that the compliance of substrates was relevant not only to its thickness, but also to their lateral size. The introduction of substrate compliance significantly reduced the total strain energy in the epilayers, and increased the critical thickness. That approach was realized by growth on the mesa substrates. The TEM observations confirmed the results of calculations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 379: Symposium C – Strained Layer Epitaxy–Materials, Processing, and Devise Applications , 1995 , 61
Copyright
Copyright © Materials Research Society 1995

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References

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