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Electrical Characterisation of Epitaxial (100) CoSi2/Si Contacts Obtained Using a Ti/Co Bilayer

Published online by Cambridge University Press:  03 September 2012

A. Lauwers ,
A. Vercaemst ,
M. Van Hove ,
K. Kyllesbech Larsen ,
R. Verbeeck ,
R. Van Meirhaeghe ,
K. Maex  and
M. Van Rossum
A. Lauwers
Affiliation:
Imec, Kapeidreef 75, 3001 Leuven, Belgium
A. Vercaemst
Affiliation:
Laboratoriumn voor Kristallografie en Studie van de Vaste Stof, Rijksuniversiteit Gent, Krijgslaan 281, 9000 Gent, Belgium
M. Van Hove
Affiliation:
Imec, Kapeidreef 75, 3001 Leuven, Belgium
K. Kyllesbech Larsen
Affiliation:
Imec, Kapeidreef 75, 3001 Leuven, Belgium
R. Verbeeck
Affiliation:
Imec, Kapeidreef 75, 3001 Leuven, Belgium
R. Van Meirhaeghe
Affiliation:
Laboratoriumn voor Kristallografie en Studie van de Vaste Stof, Rijksuniversiteit Gent, Krijgslaan 281, 9000 Gent, Belgium
K. Maex
Affiliation:
Imec, Kapeidreef 75, 3001 Leuven, Belgium
M. Van Rossum
Affiliation:
Imec, Kapeidreef 75, 3001 Leuven, Belgium
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Abstract

In this paper the electrical properties of epitaxial CoSi2 on Si obtained by solid-state reaction of a Ti/Co bimetallic layer are investigated. Low temperature resistivity, magnetoresistance and Hall data are presented. The CoSi2ISi Schottky diodes are characterised by current - voltage and capacitance - voltage measurements at temperatures varying between - 100°C and 60°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 320: Symposium D – Silicides, Germanides, and Their Interfaces , 1993 , 59
Copyright
Copyright © Materials Research Society 1994

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References

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