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Electrical Characterization of Proton Irradiated n-Type ZnO

Published online by Cambridge University Press:  01 February 2011

F Danie Auret ,
Michael Hayes ,
Jackie Nel ,
Walter Meyer ,
Pieter Johan Janse van Rensburg ,
Werner Wesch  and
E Wendler
F Danie Auret
Affiliation:
danie.auret@up.ac.za, University of Pretoria, Physics, NW1 Building, Lynnwood Road, Hatfield, Pretoria, 0002, South Africa, +27 - 12 - 420 2684, +27 - 12 - 362 5288
Michael Hayes
Affiliation:
mhayes@postino.up.ac.za, University of Pretoria, Physics Department, Pretoria, 0002, South Africa
Jackie Nel
Affiliation:
jackie.nel@up.ac.za, University of Pretoria, Physics Department, Pretoria, 0002, South Africa
Walter Meyer
Affiliation:
w@up.ac.za, University of Pretoria, Physics Department, Pretoria, 0002, South Africa
Pieter Johan Janse van Rensburg
Affiliation:
jvr@up.ac.za, University of Pretoria, Physics Department, Pretoria, 0002, South Africa
Werner Wesch
Affiliation:
werner@up.ac.za, Friedrich-Schiller-Universität, Institut für Festkörperphysik, Jena, 0002, Germany
E Wendler
Affiliation:
E@up.ac.za, Friedrich-Schiller-Universität, Institut für Festkörperphysik, Jena, 0002, Germany
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Abstract

Ru Schottky barrier diodes (SBD's) were fabricated on the Zn face of n-type ZnO. These diodes were irradiated with 1.8 MeV at fluences ranging from 1 ´ 1013 cm-2 to 2.4 ´ 1014 cm-2. Capacitance and current (I) deep level transient spectroscopy (DLTS) was used to characterise the irradiation induced defects. Capacitance DLTS showed that proton irradiation introduced a level, Ep1, at 0.52 eV below the conduction band at an introduction rate of 13±1 cm-1. A defect with a very similar DLTS signature was also present in low concentrations in unirradiated ZnO. I-DLTS revealed that this proton irradiation introduced a defect with an energy level at (0.036± 0.004) eV below the conduction band. This defect is clearly distinguishable from a defect with a level at (0.033± 0.004) eV below the conduction band that was present in the unirradiated sample. It is speculated that these shallow level defects are related to zinc interstitials or complexes involving them.

Keywords

defectsdeep level transient spectroscopy (DLTS)II-VI
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 957: Symposium K – Zinc Oxide and Related Materials , 2006 , 0957-K03-08
Copyright
Copyright © Materials Research Society 2007

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