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Electron Field Emission from Aluminum Nitride

Published online by Cambridge University Press:  10 February 2011

D. P. Malta ,
G. G. Fountain ,
J. B. Posthill ,
T. P. Humphreys ,
C. Pettenkofer  and
R. J. Markunas
D. P. Malta
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709 USA
G. G. Fountain
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709 USA
J. B. Posthill
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709 USA
T. P. Humphreys
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709 USA
C. Pettenkofer
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709 USA
R. J. Markunas
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709 USA
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Abstract

AlN has been identified as a candidate material for cold cathode field emitters due to its purported negative electron affinity (NEA) surface. Recent studies by our group on AlN(0001) using angle-resolved ultraviolet photoelectron spectroscopy (ARUPS) and scanning electron microscopy (SEM) have indicated that AlN(0001) is a positive electron affinity surface. We have also investigated electron field emission behavior of AlN and pure Al films grown on Si. AlN and Al films were grown by molecular beam epitaxy (MBE) and transported via an ultra-high vacuum (UHV) integrated processing system (IPS) to an electron emission measurement system (EEMS). The reference Al film on Si showed characteristic Fowler-Nordheim behavior with a turn-on field of 120V/μm (defined at 10μA-cm-2) and ∼100μA-cm-2 emission at 140V/μm. The AlN film also showed Fowler-Nordheim behavior with a turn-on field of 60V/μm and ∼10mA-cm-2 at 100V/μm. Air exposure of the AlN film caused a shift in turn-on to 90V/μm and ∼0.1mA-cm-2 at 100V/μm. The I-V behavior of the AlN film is consistent with the ARUPS results on a different AlN sample - both indicating a positive electron affinity AlN surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 468: Symposium D – Gallium Nitride and Related Materials II , 1997 , 437
Copyright
Copyright © Materials Research Society 1997

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References

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