Hostname: page-component-848d4c4894-wg55d Total loading time: 0 Render date: 2024-06-12T08:55:01.016Z Has data issue: false hasContentIssue false
  • English
  • Français

Electronic Structures of β-SiC(001) Surfaces and Al/β-SiC(001) Interface

Published online by Cambridge University Press:  21 February 2011

Xiao Hu ,
Hong Yan  and
Fumio S. Ohuchi
Xiao Hu
Affiliation:
Department of Materials Science and Engineering, FB-10 University of Washington, Seattle, WA 98195, U.S.A.
Hong Yan
Affiliation:
Department of Materials Science and Engineering, FB-10 University of Washington, Seattle, WA 98195, U.S.A.
Fumio S. Ohuchi
Affiliation:
Department of Materials Science and Engineering, FB-10 University of Washington, Seattle, WA 98195, U.S.A.
Get access

Abstract

Surface electronic structures of β-SiC reconstructed (001) surfaces and the Al/β-SiC(001) interface have been investigated by employing a tight-binding method. Distinct surface electronic characteristics corresponding to different surface reconstructions are discussed based on the interpretation of surface density of states. The calculations of the Al/β-SiC (001) interface indicate that aluminum deposition on β-SiC(001) surface may induce the substrate to return to the ideal unreconstructed surface and that Al-C interaction is stronger than Al-Si interaction. Al deposition on C-rich surfaces may form a better bonded interface than that on the Si-rich surfaces. Our findings are in good agreement with available experimental and theoretical results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 15
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCE

[1] Dayan, M., J. Vac. Sci. Technol. A 3, 361 (1985); A 4, 38 (1986)Google Scholar
[2] Choyke, W.J., in Proceedings of Novel Refractory Semiconductors, ed. by Emin, David, Aselage, T.L., and Wood, Charles, MRS Symposia Proceedings, No.97 (Material Researc Society, Pittsburgh, 1987), p. 207 Google Scholar
[3] Slater, J.C. and Koster, G.F., Phys. Rev. B 94, 1498 (1954)Google Scholar
[4] Harrison, W.A., Electronic Structure and The Properties of Solids (Freemen, San Francisco, CA, 1980)Google Scholar
[5] Hu, X., Yan, H., Ohuchi, F.S. and Kohyama, M., preprint, 1994 Google Scholar
[6] Keating, P.N., Phys. Rev. B 145, 637 (1966)Google Scholar
[7] Martins, J.C. and Zunger, A., Phys. Rev. B 30, 6217 (1984)Google Scholar
[8] Slater, J.C., Quantum Theory of Molecules and Solids, Vol.2, (McGraw-Hill, New Yor 1965) p. 307 Google Scholar
[9] Parrill, T.M. and Chung, Y.W., Surf. Sci. 243, 96 (1991)Google Scholar
[10] Hara, S., Aoyagi, Y., Kawai, M., Misawa, S., Sakuma, E. and Yoshida, S., Surf. Sci. 273, 437 (1992)Google Scholar
[11] Kaplan, R. and Parrill, T.M., Surf. Sci. 165, L45 (1986)Google Scholar
[12] Bermudez, V.M. and Kaplan, R., Phys. Rev. B 44, 11149 (1991)Google Scholar
[13] Powers, J.M., Wander, A., Rous, P.J., Van Hove, M.A. and Somorjai, G.A., Phys. Rev. B 44, 11159 (1991); Surf. Sci. Lett. 260, L7 (1992)Google Scholar
[14] Badziag, , Phys. Rev. B 44, 11143 (1991)Google Scholar
[15] Craig, B.I. and Smith, P.V., Surf. Sci. 233, 255 (1990); Surf. Sci. Lett. 256, L609 (1991)Google Scholar
[16] Hoechst, H., Tery, M., Johnson, B.C., Meere, J.M., Zajac, G.W. and Fleish, T.H., J. Vac. Sci. Technol. A, 5, 1640 (1987)Google Scholar
[17] Kruger, P., Mazur, A., Pollmann, J. and Wolfgarten, G., Phys. Rev. Lett. 57, 1468 (1986)Google Scholar
[18] R.Uhrberg, I.G., Hansson, G.V., Nicholls, J.M. and Flodstrom, S.A., Phys. Rev. B 24, 4684 (1991)Google Scholar
[19] Bermudez, V.M., Appl. Phys. Lett. 42 70 (1983)Google Scholar
[20] Lu, W., Zhang, K. and Xie, X., Phys. Rev. B, 45, 11048 (1991)Google Scholar