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Exposure of Diamond to Atomic Hydrogen: Secondary Electron Emission and Conductivity Effects

Published online by Cambridge University Press:  21 February 2011

D. P. Malta ,
J. B. Posthill ,
T. P. Humphreys ,
R. E. Thomas ,
G. G. Fountain ,
R. A. Rudder ,
G. C. Hudson ,
M. J. Mantini  and
R. J. Markunas
D. P. Malta
Affiliation:
Research Triangle Institute, P.O. Box 12194, Research Triangle Park, NC 27709
J. B. Posthill
Affiliation:
Research Triangle Institute, P.O. Box 12194, Research Triangle Park, NC 27709
T. P. Humphreys
Affiliation:
Research Triangle Institute, P.O. Box 12194, Research Triangle Park, NC 27709
R. E. Thomas
Affiliation:
Research Triangle Institute, P.O. Box 12194, Research Triangle Park, NC 27709
G. G. Fountain
Affiliation:
Research Triangle Institute, P.O. Box 12194, Research Triangle Park, NC 27709
R. A. Rudder
Affiliation:
Research Triangle Institute, P.O. Box 12194, Research Triangle Park, NC 27709
G. C. Hudson
Affiliation:
Research Triangle Institute, P.O. Box 12194, Research Triangle Park, NC 27709
M. J. Mantini
Affiliation:
Research Triangle Institute, P.O. Box 12194, Research Triangle Park, NC 27709
R. J. Markunas
Affiliation:
Research Triangle Institute, P.O. Box 12194, Research Triangle Park, NC 27709
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Abstract

Secondary electron (SE) yield was enhanced by a factor of ∼30 and surface conductance increased up to 10 orders of magnitude when O-terminated or non-terminated natural diamond (100) surfaces were exposed to atomic H. The SE yield from atomic H-exposed surfaces was spatially dependent on near-surface microcrystalline perfection enabling defect-contrast imaging in the conventional SE mode of the scanning electron microscope (SEM). Ultraviolet photoelectron spectroscopy (UPS) on atomic H-exposed surfaces revealed an intense low energy peak attributed to photoexcitation of secondary electrons into unoccupied hydrogen-induced states near the conduction band edge and their subsequent escape into vacuum. The low energy photoemission peak, enhanced SE yield and enhanced surface conductivity were completely removed via high temperature annealing or exposure to atomic O creating the denuded or O-terminated surfaces, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 39
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

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