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Fabrication of Ta2O5 Thin Films by Anodic Oxidation of Tantalum Nitride and Tantalum Silicide: Growing Mechanisms, Electrical Characterization and ULSI M-I-M Capacitor Performances

Published online by Cambridge University Press:  10 February 2011

S. Dueñas ,
H. Castán ,
J. Barbolla ,
R.R. Kola  and
P.A. Sullivan
S. Dueñas
Affiliation:
Dept. Electricidad y Electrónica, Facultad de Ciencias, Universidad de Valladolid, 47011 Valladolid, SPAIN, sduenas@ele.uva.es
H. Castán
Affiliation:
Dept. Electricidad y Electrónica, Facultad de Ciencias, Universidad de Valladolid, 47011 Valladolid, SPAIN, sduenas@ele.uva.es
J. Barbolla
Affiliation:
Dept. Electricidad y Electrónica, Facultad de Ciencias, Universidad de Valladolid, 47011 Valladolid, SPAIN, sduenas@ele.uva.es
R.R. Kola
Affiliation:
Bell Laboratories, Lucent Technologies, 700 Mountain Ave., Murray Hill, NJ 07974
P.A. Sullivan
Affiliation:
Dept. Electricidad y Electrónica, Facultad de Ciencias, Universidad de Valladolid, 47011 Valladolid, SPAIN, sduenas@ele.uva.es
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Abstract

In this work we report on tantalum oxide fabricated by anodic oxidation of tantalum nitride and tantalum silicide to be used as the dielectric of Metal-Insulator-Metal (MIM) capacitors. These films exhibit greatly improved leakage currents, breakdown voltage and very low defect density, thus allowing the fabrication of large area capacitors. Several counter and bottom electrodes have been used and compared. The effects of the different processing conditions (top-electrode metals, annealing conditions, bottom electrode stoichiometry and precursor) on the capacitor performances are extensively discussed throughout this work. The electrical behavior of the resulting high-density MIM capacitors has been extensively characterized. Finally, we propose a set of selection guides to select the more appropriate process parameter values and electrode materials for a given application of these capacitors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 567: Symposium R – Ultrathin SiO2 and Higg-K Materials for ULSI Gate Dielectrics , 1999 , 371
Copyright
Copyright © Materials Research Society 1999

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References

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