Hostname: page-component-848d4c4894-wzw2p Total loading time: 0 Render date: 2024-06-12T03:56:01.424Z Has data issue: false hasContentIssue false
  • English
  • Français

Fe-Silicides Formed with Molecular Beam Epitaxy and Studied with Conversion Electron Mössbauer Spectroscopy

Published online by Cambridge University Press:  03 September 2012

S. Degroote ,
M.H. Langelaar ,
T. Kobayashi ,
J. Dekoster ,
J. De Wachter ,
R. Moons ,
L. Niesen  and
G. Langouche
S. Degroote
Affiliation:
Instituut voor Kern-en Stralingsfysik, University of Leuven, Celesq/nienlaan 200D, B-3001 Leuven
M.H. Langelaar
Affiliation:
Instituut voor Kern-en Stralingsfysik, University of Leuven, Celesq/nienlaan 200D, B-3001 Leuven Nucleaire Vaste Slof Fysica, University of Groningen, Nyenborgh 4, NL-9 747 A G Groningen
T. Kobayashi
Affiliation:
Instituut voor Kern-en Stralingsfysik, University of Leuven, Celesq/nienlaan 200D, B-3001 Leuven
J. Dekoster
Affiliation:
Instituut voor Kern-en Stralingsfysik, University of Leuven, Celesq/nienlaan 200D, B-3001 Leuven
J. De Wachter
Affiliation:
Instituut voor Kern-en Stralingsfysik, University of Leuven, Celesq/nienlaan 200D, B-3001 Leuven
R. Moons
Affiliation:
Instituut voor Kern-en Stralingsfysik, University of Leuven, Celesq/nienlaan 200D, B-3001 Leuven
L. Niesen
Affiliation:
Nucleaire Vaste Slof Fysica, University of Groningen, Nyenborgh 4, NL-9 747 A G Groningen
G. Langouche
Affiliation:
Instituut voor Kern-en Stralingsfysik, University of Leuven, Celesq/nienlaan 200D, B-3001 Leuven
Get access

Abstract

Fe-sulicides were formed by annealing MBE-deposited thin 57Fe layers with thicknesses between 20 Å and 60 Å on (7x7) reconstructed Si(111) substrates. During the growth the substrate was held at room temperature. The silicide formation upon annealing in the temperature range of 200°C to 900°C was studied in-situ with RH-EED. Samples were studied with in-situ CEMS (Conversion Electron Mossbauer Spectroscopy) as well as with ex-situ CEMS after covering with Ag to prevent oxidation. RBS/Channeling was used to study the epitaxial quality and the structure of these layers.

Using the 57Fe nuclear probe, it is shown that silicide formation occurs at the interface already at room temperature. Metastable silicides with cubic structure are observed in the low temperature annealing range, and characterized by their Mossbauer parameters. At higher temperatures stable ε-FeSi and β-FeSi2 are formed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 320: Symposium D – Silicides, Germanides, and Their Interfaces , 1993 , 133
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Hansen, Max, Constitution of binary alloys, (McGraw-Hill book Company 1958).Google Scholar
2. Onda, N., Henz, J., Muller, E., Mader, K.A. and Kanel, H. Von, AppI. Surface Sci. 56–58, 421 (1992).Google Scholar
3. Derrien, J., Chevrier, J., Vinh, Le Thanh, Berbezier, I., Lagomarsino, S. and Grimaldi, M.G., RMS93.Google Scholar
4. Mäder, K.A., Kanel, H. Von and Baldereschi, A., Phys. Rev. B 48(7), 4364 (1993).Google Scholar
5. Kobayashi, T., Dekoster, J., Degroote, S., Langelaar, M.H., Niesen, L. and Langouche, G., proceedings conference in Julich (1993).Google Scholar
6. Degroote, S., Langelaar, M.H., Kobayashi, T., Dekoster, J., Wachter, J. De, Moons, R., Niesen, L. and Langouche, G., to be published.Google Scholar
7. Doolittle, L.R., Nucl. Instr. Meth. B9, 344 (1985).Google Scholar
8. Derrien, J., Ghevrier, J., Younsi, A., Thanh, V. Le, Dussaulcy, J.P. and Cherief, N., Phys. Scr. T35, 251 (1991).CrossRefGoogle Scholar
9. Wallart, X., Zeng, H.S., Nys, J.P. and Dalmai, G., AppI. Surface. Sci. 56/58, 427–433 (1992).CrossRefGoogle Scholar
10. Kanel, H. Von, Onda, N., Sirringhaus, H., Mèiller, E., Goncalves-Gonto, S. and Schwarz, C., (preprint)Google Scholar
11. Alvarez, J., Parga, A.L. Vdzquez de, Hinarejos, J.J., Figuera, J. de la, Michel, E.G., Ocal, C. and Miranda, R., J. Vac. Sci. Technol. A 11 (4), 929 (1993).Google Scholar
12. Helgason, Örn and Sigffisson, T.I., Hyp. Int. 45, 415–418 (1989).Google Scholar
13. Derrien, J., Ghevrier, J., Thanh, V. Le and Manhan, J.E., Appl. Surface Sci. 56–58, 382–393 (1992).Google Scholar