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A FIB Micro-Sampling Technique and a Site-Specific TEM Specimen Preparation Method for Precision Materials Characterization

Published online by Cambridge University Press:  17 March 2011

Toshie Yaguchi ,
Ryoichi Urao ,
Takeo Kamino ,
Tsuyoshi Ohnishi ,
Takahito Hashimoto ,
Kaoru Umemura  and
Satoshi Tomimatsu
Toshie Yaguchi
Affiliation:
School of Engineering, Ibaraki University, Hitachi, Ibaraki 316-0031, JAPAN Hitachi Science Systems, Ltd., 882 Ichige, Hitachinaka, Ibaraki, 312-8504, JAPAN
Ryoichi Urao
Affiliation:
School of Engineering, Ibaraki University, Hitachi, Ibaraki 316-0031, JAPAN
Takeo Kamino
Affiliation:
Hitachi Science Systems, Ltd., 882 Ichige, Hitachinaka, Ibaraki, 312-8504, JAPAN
Tsuyoshi Ohnishi
Affiliation:
Instruments Division, Hitachi Ltd., 882 Ichige, Hitachinaka, Ibaraki, 312-8504, JAPAN
Takahito Hashimoto
Affiliation:
Instruments Division, Hitachi Ltd., 882 Ichige, Hitachinaka, Ibaraki, 312-8504, JAPAN
Kaoru Umemura
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo, 185-8601, JAPAN
Satoshi Tomimatsu
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo, 185-8601, JAPAN
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Abstract

A technique to cut out small pieces of samples directly from chips or wafer samples in a focused ion beam (FIB) system has been developed. A deep trench is FIB milled to cut out a small, wedge-shaped portion of the sample from the area of interest A micromanipulator with tungsten (W) probe is employed for lifting the micro-sample. The lifted micro-sample is then mounted on a carrier to prepare electron transparent thin foil specimens for transmission electron microscope (TEM) observation. We have also developed a method for site-specific TEM specimen preparation. In this method, FIB system and TEM/scanning transmission electron microscope (STEM) equipped with secondary electron (SE) detector are employed. An FIB–TEM/STEM compatible specimen holder has also been developed so that a specimen can be milled in the FIB system and observed in a TEM/STEM without remounting the specimen. STEM and scanning electron microscopy (SEM) images are used for locating a specific site on a specimen. SEM image observation at an accelerating voltage of 200kV enabled us to observe not only surface structures but also inner structures near the surface of a cross section with depth of field of around 1 micrometer. The STEM image allows the observation of inner structures of 3-5 micrometer thick specimens. Milling of a specimen by FIB and observation of the milled sample by SEM and STEM are alternately carried out until an electron transparent thin foil specimen is obtained. The position accuracy of the method in TEM specimen preparation is approximately 100nm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 636: Symposium D – Nonlithographic and Lithographic Methods of Nanofabrication-From Ultralarge Scale , 2000 , D9.35.1
Copyright
Copyright © Materials Research Society 2001

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