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Gettering Effect in Low and High Density Structural Defect Regions of the Cast Multi-Crystalline-Silicon Wafer

Published online by Cambridge University Press:  01 February 2011

Yongkook Park ,
Jinggang Lu  and
G. A. Rozgonyi
Yongkook Park
Affiliation:
hyspy3@hanmail.net, North Carolina State University, Materials Science and Engineering, 911 Partners Way, Raleigh, NC, 27695-7907, United States
Jinggang Lu
Affiliation:
jlu7@ncsu.edu, North Carolina State University, Materials Science and Engineering Department, Raleigh, NC, 27695-7907, United States
G. A. Rozgonyi
Affiliation:
rozgonyi@ncsu.edu, North Carolina State University, Materials Science and Engineering Department, Raleigh, NC, 27695-7907, United States
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Abstract

Two cast multi-crystalline silicon (mc-Si) sister wafers before and after solar cell processing were investigated to explore the gettering effect in low and high density structural defect regions. For the processed wafer, the minority carrier recombination lifetime was correlated to the structural defect distribution. For the low density region of as-grown wafer, Cr impurities were 3.28x1013cm-3 and they were reduced to 1.74×1012cm−3 for the processed wafer. The isolated Cr impurities dissolved from the precipitates at 900°C which is the typical gettering temperature in the solar cell processing are getterd effectively in the low density regions. Our current understanding for the gettering effect in the high density regions is that the segregated Cr impurities at defect sites are not released to the silicon matrix at 900°C resulting in the poor gettering effect.

Keywords

Sideep level transient spectroscopy (DLTS)Cr
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 994: Symposium F – Semiconductor Defect Engineering–Materials, Synthetic Structures and Devices II , 2007 , 0994-F11-21
Copyright
Copyright © Materials Research Society 2007

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References

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