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Growth Monitoring of Cu-Poor Prepared CuInS2 Thin Films

Published online by Cambridge University Press:  21 March 2011

Ilka V. Luck
Affiliation:
Hahn-Meitner-Institut, Solar Energy Research, Technology, Glienicker Straβle 100, 14109 Berlin, Germany
Jacobo Alvarez-Garcia
Affiliation:
Universitat de Barcelona, Facultat de Fisica, Departament d'Electronica, EME, Avda. Diagonal 645-647, 08028 Barcelona, Spain
Lorenzo Calvo-Barrio
Affiliation:
Universitat de Barcelona, Facultat de Fisica, Departament d'Electronica, EME, Avda. Diagonal 645-647, 08028 Barcelona, Spain
Axel Werner
Affiliation:
Hahn-Meitner-Institut, Solar Energy Research, Technology, Glienicker Straβle 100, 14109 Berlin, Germany
Alejandro Perez-Rodriguez
Affiliation:
Universitat de Barcelona, Facultat de Fisica, Departament d'Electronica, EME, Avda. Diagonal 645-647, 08028 Barcelona, Spain
J. R. Morante
Affiliation:
Universitat de Barcelona, Facultat de Fisica, Departament d'Electronica, EME, Avda. Diagonal 645-647, 08028 Barcelona, Spain
Dieter Bräunig
Affiliation:
Hahn-Meitner-Institut, Solar Energy Research, Technology, Glienicker Straβle 100, 14109 Berlin, Germany
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Abstract

The CuInS2 thin film formation from a Cu/In precursor stack in the presence of elemental sulfur using a rapid thermal process under Cu-poor conditions has been studied. The process has been aborted at appropriate stages and the corresponding samples were investigated by XRD, Raman spectroscopy and SEM. The sulfurisation starts from elemental Cu and CuIn2. Elemental In and the binary phases Cu11In9 and Cu7In3 appear as intermediate phases. At the end of the sulfurisation the sample contains the ternary phases CuInS2 and CuIn5S8. CuS and β-In2S3 are detected by Raman spectroscopy at the sample surface and at distinct stages of the sulfurisation only. A difference in CuInS2 crystal quality is observed between the surface and the bottom of the samples.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

[1] Contreras, M., Egaas, B., Ramanathan, K., Hiltner, J., Hasoon, F. and Noufi, R., Prog. Photovoltaics, 7(1999), 311 Google Scholar
[2] Siemer, K., Klaer, J., Luck, I., Bruns, J., Klenk, R. and Bräunig, D., Sol. En. Mat., 67 (2000), 159 Google Scholar
[3] Watanabe, T. and Matsui, M., Jpn. J. Appl. Phys., 38(1999), L208 Google Scholar
[4] Gossla, M., Metzner, H. and Mahnke, H.-E., J. Appl. Phys., 86(7)(1999), 3624 Google Scholar
[5] Scheer, R., Diesner, K. and Lewerenz, H.-J., Thin solid films, 268(1995), 130 Google Scholar
[6] Alvarez-Garcia, J., private communicationGoogle Scholar
[7] Siemer, K., Klaer, J., Luck, I., Alvarez-Garcia, J., Perez-Rodriguez, A., Romano-Rodriguez, A. and Bräunig, D., Sol. En. Mat., 67(2001), 159 Google Scholar
[8] Dzionk, C., Metzner, H., Lewerenz, H.-J. and Mahnke, H.-E., J. Appl. Phys., 78(1995), 2392 Google Scholar
[9] Wolf, D., Müller, G., Stetter, W. and Karg, F., 2nd WCPSEC, Vienna, Austria, 1998 Google Scholar
[10] Wolf, D. and Müller, G., Inst. Phys. Conf. Ser. No 152: Section B, (1998), 281 Google Scholar