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High Resolution X-Ray Scattering Studies of Strain in Epitaxial Thin Films of Yttrium Silicide Grown on Silicon(111)

Published online by Cambridge University Press:  28 February 2011

L. J. Martinez-Miranda ,
M. P. Siegal ,
P. A. Heiney ,
J. J. Santiago-Aviles  and
W. R. Graham
L. J. Martinez-Miranda
Affiliation:
Laboratory for Research on the Structure of Matter. Department of Electrical Engineering
M. P. Siegal
Affiliation:
Laboratory for Research on the Structure of Matter. Department of Materials Science and Engineering
P. A. Heiney
Affiliation:
Laboratory for Research on the Structure of Matter. Department of Physics University of Pennsylvania, Philadelphia, PA 19104
J. J. Santiago-Aviles
Affiliation:
Laboratory for Research on the Structure of Matter. Department of Electrical Engineering
W. R. Graham
Affiliation:
Laboratory for Research on the Structure of Matter. Department of Materials Science and Engineering
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Abstract

We have used high resolution grazing incidence x-ray scattering (GIXS) to study the in-plane and out-of-plane structure of epitaxial YSi2-x films grown on Si (111), with thicknesses ranging from 85Å to 510Å. Our results indicate that the films are strained, and that film strain increases as a function of thickness, with lattice parameters varying from a = 3.846Å/c = 4.142Å for the 85Å film to a = 3.877Å/c = 4.121Å for the 510Å film. We correlate these results with an increase in pinhole areal coverage as a function of thickness. In addition, our measurements show no evidence for the existence of ordered silicon vacancies in the films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 287
Copyright
Copyright © Materials Research Society 1990

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