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Improvement of Characteristics in Highly Reliable thin Film Diode with Anodic Tantalum Pentoxide by Low Temperature Annealing Conditions

Published online by Cambridge University Press:  17 March 2011

Chan-Jae Lee ,
Sung-Jei Hong ,
Sung-Kyu Park ,
Yong-Hoon Kim ,
Min-Gi Kwak ,
Won-Keun Kim  and
Jeong-In Han
Chan-Jae Lee
Affiliation:
Information Display Research Center, Korea Electronics Technology Institute, 455-6 PyungTack, KyungGi, Korea;
Sung-Jei Hong
Affiliation:
Information Display Research Center, Korea Electronics Technology Institute, 455-6 PyungTack, KyungGi, Korea;
Sung-Kyu Park
Affiliation:
Information Display Research Center, Korea Electronics Technology Institute, 455-6 PyungTack, KyungGi, Korea;
Yong-Hoon Kim
Affiliation:
Information Display Research Center, Korea Electronics Technology Institute, 455-6 PyungTack, KyungGi, Korea;
Min-Gi Kwak
Affiliation:
Information Display Research Center, Korea Electronics Technology Institute, 455-6 PyungTack, KyungGi, Korea;
Won-Keun Kim
Affiliation:
Information Display Research Center, Korea Electronics Technology Institute, 455-6 PyungTack, KyungGi, Korea;
Jeong-In Han
Affiliation:
Information Display Research Center, Korea Electronics Technology Institute, 455-6 PyungTack, KyungGi, Korea;
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Abstract

In this study, the quality of thin film diode (TFD) as a switching device for active-matrix liquid-crystal-displays (AM-LCDs) was enhanced by low temperature annealing conditions with high reliability and good electrical properties. Device was composed with Ta as bottom electrode, anodic Ta2O5 as insulator layer and top electrode. Two types of material such as Ti and Cr were evaluated as a top electrode of the TFD device to optimize the symmetry of current-voltage characteristic curve, respectively. The annealing was done at low temperature conditions below 350°C. The low temperature annealing improved the TFD device with nearly perfect symmetry under high electric field.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 699: Symposium R – Electrically Based Microstructural Characterization III , 2001 , R6.6
Copyright
Copyright © Materials Research Society 2002

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