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Incubation Layer-Free Nanocrystalline-Si Thin Film Fabricated by ICP-CVD at 150°C for Flexible Electronics

Published online by Cambridge University Press:  01 February 2011

Sang-Myeon Han ,
Young-Kwan Cha ,
Joong-Hyun Park ,
Sang-Geun Park ,
YoungSoo Park  and
Min-Koo Han
Sang-Myeon Han
Affiliation:
smhan@emlab.snu.ac.kr, Seoul National University, School of Electrical Engineering, San 56-1, Shinlim-Dong, Gwanak-Gu, Seoul, 151-742, Korea, Seoul, Seoul, 151-742, Korea, Republic of, +82-2-880-7992, +82-2-871-7992
Young-Kwan Cha
Affiliation:
yk618.cha@samsung.com, Samsung Advanced Insitute of Technology, P.O. Box 111, Suwon, GyeongGi-Do, 440-600, Korea, Republic of
Joong-Hyun Park
Affiliation:
jhpark@emlab.snu.ac.kr, Seoul National University, School of Electrical Engineering, San 56-1, Shinlim-Dong, Gwanak-Gu, Seoul, 151-742, Korea, Seoul, Seoul, 151-742, Korea, Republic of
Sang-Geun Park
Affiliation:
psg97@emlab.snu.ac.kr, Seoul National University, School of Electrical Engineering, San 56-1, Shinlim-Dong, Gwanak-Gu, Seoul, 151-742, Korea, Seoul, Seoul, 151-742, Korea, Republic of
YoungSoo Park
Affiliation:
uvip@samsung.com, Samsung Advanced Insitute of Technology, P.O. Box 111, Suwon, GyeongGi-Do, 440-600, Korea, Republic of
Min-Koo Han
Affiliation:
mkh@snu.ac.kr, Seoul National University, School of Electrical Engineering, San 56-1, Shinlim-Dong, Gwanak-Gu, Seoul, 151-742, Korea, Seoul, Seoul, 151-742, Korea, Republic of
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Abstract

The nc-Si films where the troublesome incubation layer was almost eliminated were deposited by inductively coupled plasma chemical vapor deposition (ICP-CVD) under various dilution conditions. The nc-Si films were analyzed with cross-sectional high resolution transmission electron microscopy (HR-TEM) images. It was verified that the Si crystalline components formed and grew from the surface of buffer layer. The grain size of 20~50nm was measured. The absence of incubation layer in nc-Si film may be attributed mainly to ICP-CVD which generates remote plasma of high density, the role of hydrogen, and the dilution effect on the growth of crystalline. Our experimental results show that incubation-free nc-Si film deposited by ICP-CVD may be suitable for the active layer of bottom gate nc-Si TFTs as well as top gate nc-Si TFTs.

Keywords

Sifilmchemical vapor deposition (CVD) (deposition)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 910: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology – 2006 , 2006 , 0910-A08-01
Copyright
Copyright © Materials Research Society 2006

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